This paper presents the design and implementation of a low-profile remote monitoring and control system for water level management in storage tanks located in rural communities. The system was developed to ensure a reliable water supply, prevent spills, reduce electrical energy consumption, and mitigate theft and vandalism risks posed by a previously installed, highly exposed commercial system. The proposed system employs LoRa technology to transmit water level data from the storage tank to a receiver located 6 km from the water well. When the water level drops below a predefined threshold, the system transmits an activation signal through the LoRa network to start the well pump and trigger tank refilling. In addition, an SMS monitoring module enables users to remotely verify water level and pump operational status at any time. System notifications and operational data are automatically delivered via SMS to predefined phone numbers, enabling continuous supervision without requiring internet connectivity. The implementation of the proposed system thus provides an efficient and reliable solution for water resource management in rural environments, ensuring continuous water availability and preventing supply shortages. LoRa communication enables robust long-range data transmission, while SMS-based monitoring offers real-time operational awareness for end users. The system was validated through field testing in a pilot rural community, demonstrating operational robustness, improved water management efficiency, and measurable positive impacts on residents’ water service continuity. The low-profile physical design significantly reduced theft and vandalism incidents reported by the local water authority. Experimental results showed an average monthly reduction of 41.2% in electrical energy consumption while maintaining high system reliability, physical security, and real-time monitoring capability.

Nanocrystalline diamond (NCD) films were synthesized by microwave plasma chemical vapor deposition (MPCVD) from a CH₄/Ar mixture on seedless p-type Si(111) substrates at 100–400 °C. Crystallinity was evaluated by X-ray diffraction (Cu Kα); bonding by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS); morphology and thickness by scanning electron microscopy (SEM); defect states by thermoluminescence (TL). SEM shows continuous films with uniform thickness. XRD displays a broad (111) reflection near 2θ = 44°. Raman and XPS reveal temperature-dependent bonding: between 300 and 400 °C, the sp³ fraction increases relative to sp². TL glow curves show peaks at 157 °C and 270 °C, indicating electron-trap centers. These results demonstrate hydrogen-free and seedless NCD growth at low substrate temperatures, supporting potential electronic and dosimetry applications requiring a low thermal load.