Hydrothermal zinc oxide (ZnO) thick films were successfully grown on the chemical vapor deposition (CVD)-grown thick ZnO seed layers on a-plane sapphire substrates using the aqueous solution of zinc nitrate dehydrate (Zn(NO₃)₂). The use of the CVD ZnO seed layers with the flat surfaces seems to be a key technique for obtaining thick films instead of vertically aligned nanostructures as reported in many literatures. All the hydrothermal ZnO layers showed the large grains with hexagonal end facets and were highly oriented towards the c-axis direction. Photoluminescence (PL) spectra of the hydrothermal layers were composed of the ultraviolet (UV) emission (370 to 380 nm) and the visible emission (481 to 491 nm), and the intensity ratio of the former emission (I _UV) to the latter emission (I _VIS) changed, depending on both the molarity of the solution and temperature. It is surprising that all the Hall mobilities for the hydrothermal ZnO layers were significantly larger than those for their corresponding CVD seed films. It was also found that, for the hydrothermal films grown at 70°C to 90°C, the molarity dependences of I _UV/I _VIS resembled those of mobilities, implying that the mobility in the film is affected by the structural defects. The highest mobility of 166 cm²/Vs was achieved on the hydrothermal film with the carrier concentration of 1.65 × 10¹⁷ cm⁻³ grown from the aqueous solution of 40 mM at 70°C.

The formation of high-density zinc oxide (ZnO) nanorods on porous silicon (PS) substrates at growth temperatures of 600–1000 °C by a simple thermal evaporation of zinc (Zn) powder in the presence of oxygen (O₂) gas was systematically investigated. The high-density growth of ZnO nanorods with (0002) orientation over a large area was attributed to the rough surface of PS, which provides appropriate planes to promote deposition of Zn or ZnO_x seeds as nucleation sites for the subsequent growth of ZnO nanorods. The geometrical morphologies of ZnO nanorods are determined by the ZnO_x seed structures, i.e., cluster or layer structures. The flower-like hexagonal-faceted ZnO nanorods grown at 600 °C seem to be generated from the sparsely distributed ZnO_x nanoclusters. Vertically aligned hexagonal-faceted ZnO nanorods grown at 800 °C may be inferred from the formation of dense arrays of ZnO_x clusters. The formation of disordered ZnO nanorods formed at 1000 °C may due to the formation of a ZnO_x seed layer. The growth mechanism involved has been described by a combination of self-catalyzed vapor-liquid-solid (VLS) and vapor-solid (VS) mechanism. The results suggest that for a more precise study on the growth of ZnO nanostructures involving the introduction of seeds, the initial seed structures must be taken into account given their significant effects.

Pure zinc oxide and zinc oxide/barium carbonate nanoparticles (ZnO-NPs and ZB-NPs) were synthesized by the sol–gel method. The prepared powders were characterized by X-ray diffraction (XRD), ultraviolet–visible (UV–Vis), Auger spectroscopy, and transmission electron microscopy (TEM). The XRD result showed that the ZnO and BaCO3 nanocrystals grow independently. The Auger spectroscopy proved the existence of carbon in the composites besides the Zn, Ba, and O elements. The UV–Vis spectroscopy results showed that the absorption edge of ZnO nanoparticles is redshifted by adding barium carbonate. In addition, the optical parameters including the refractive index and permittivity of the prepared samples were calculated using the UV–Vis spectra.

This study investigates the most reliable approach for determining the crystallite size of nanoparticles through advanced X-ray diffraction (XRD) analysis. Gallium-doped zinc oxide nanoparticles (ZnO-NPs) were synthesized via a gelatin-assisted sol–gel method with Ga concentrations of 0%, 3%, 9%, and 15%. Structural characterization was performed using XRD, and crystallite size and lattice strain were evaluated through multiple analytical methods, including Scherrer’s equation, the Williamson–Hall (W–H) method, and both simple and modified Size–Strain Plot (SSP and MSSP) techniques. These complementary approaches enabled clear separation of size and strain effects, offering deeper insight into the microstructural evolution with increasing Ga content. The results revealed that higher Ga doping led to smaller crystallite sizes and increased lattice strain. Overall, the findings demonstrate that the MSSP method provides superior accuracy for nanoscale material characterization and highlight the significant influence of Ga incorporation on the structural properties of ZnO nanoparticles.

The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated. Under air-exposed ambient conditions, the open-gated undoped AlGaN/GaN HEMT only shows the presence of a linear current region. This seems to show that very low Fermi level pinning by surface states exists in the undoped AlGaN/GaN sample. In aqueous solution, typical current-voltage (I-V) characteristics with reasonably good gate controllability are observed, showing that the potential of the AlGaN surface at the open-gated area is effectively controlled via aqueous solution by the Ag/AgCl gate electrode. The open-gated undoped AlGaN/GaN HEMT structure is capable of distinguishing pH level in aqueous electrolytes and exhibits linear sensitivity, where high sensitivity of 1.9 mA/pH or 3.88 mA/mm/pH at drain-source voltage, V_DS = 5 V is obtained. Due to the large leakage current where it increases with the negative gate voltage, Nernstian like sensitivity cannot be determined as commonly reported in the literature. This large leakage current may be caused by the technical factors rather than any characteristics of the devices. Surprisingly, although there are some imperfections in the device preparation and measurement, the fabricated devices work very well in distinguishing the pH levels. Suppression of current leakage by improving the device preparation is likely needed to improve the device performance. The fabricated device is expected to be suitable for pH sensing applications.