Studies on two-dimensional materials (such as topological insulators or transition metal dichalcogenides) have shown that they exhibit unique properties, including high charge carrier mobility and tunable bandgaps, making them attractive for next-generation electronics. Some of these materials (e.g., HfSe₂) also offer thickness-dependent bandgap engineering. However, the standard device fabrication techniques often introduce processing contamination, which reduces device efficiency. In this paper, we present a modified mechanical exfoliation technique, the Reversed Structuring Procedure, which enables the fabrication of hybrid systems based on 2D microflakes with improved interface cleanness and contact quality. Hall effect measurements on Bi₂Se₃ and HfSe₂ devices confirm enhanced electrical performance, including the decrease in the measured total resistance. We also introduce a novel Star-Shaped Electrode Structure, which allows for accurate Hall measurements and the exploration of geometric magnetoresistance effects within the same device. This dual-purpose geometry enhances the flexibility and demonstrates broader functionality of the proposed fabrication method. The presented results validate the Reversed Structuring Procedure method as a robust and versatile approach for laboratory test-platforms for electronic applications of new types of layered materials whose fabrication technology is not yet compatible with CMOS.

Studies on two-dimensional materials (such as topological insulators or transition metal dichalcogenides) have shown that they exhibit unique properties, including high charge carrier mobility and tunable bandgaps, making them attractive for next-generation electronics. Some of these materials (e.g., HfSe2) also offer thickness-dependent bandgap engineering. However, the standard device fabrication techniques often introduce processing contamination, which reduces device efficiency. In this paper, we present a modified mechanical exfoliation technique, the Reversed Structuring Procedure, which enables the fabrication of hybrid systems based on 2D micro-flakes with improved interface cleanliness and contact quality. Hall effect measurements on Bi2Se3 and HfSe2 devices confirm enhanced electrical performance, including increased carrier mobility. We also introduce a novel Star-Shaped Electrode Structure, which allows for accurate Hall measurements and the exploration of geometric magnetoresistance effects within the same device. This dual-purpose geometry enhances the flexibility and demonstrates broader functionality of the proposed fabrication method. The presented results validate the Reversed Structuring Procedure method as a robust and versatile approach for 2D material-based electronic and sensing applications.