In the present study, copper (Cu) films were deposited on polyethylene terephthalate (PET) substrates using direct-current (DC) magnetron sputtering technology. A systematic investigation was conducted on the effects of process parameters, such as target power, gas flow rate, and substrate temperature, on the microstructure and properties of copper films. The results showed that an increase in the target power resulted in enhanced film grain size, accompanied by a reduction in resistivity and an improvement in adhesion strength. Furthermore, resistivity increased monotonically with elevated gas flow rates, whereas the adhesion strength was found to achieve its maximum at a flow rate of 350 mL/min. In addition, substrate temperature variations had negligible influence on the film grain size and resistivity; nevertheless, the adhesion progressively decreased with increasing substrate temperature. A set of optimal parameters (3 kW, 350 mL/min, −15 °C) was determined based on the comprehensive evaluation of deposition efficiency, conductivity and adhesion performance. The Cu film prepared under these conditions exhibited low resistivity (8.37 × 10⁻⁸ Ω·m) and improved adhesion strength (166 gf/mm). Therefore, it is concluded that high performance of metallized Cu films could be achieved by fine-tuning deposition parameters.