The next-generation Enriched Xenon Observatory (nEXO) is a proposed experiment to search for neutrinoless double-$\beta$ ($0\nu \beta \beta$) decay in ${}^{136}\mathrm{Xe}$ with a target half-life sensitivity of approximately ${10}^{28}$ yr using $5\times {10}^3$ kg of isotopically enriched liquid-xenon in a time projection chamber. This improvement of two orders of magnitude in sensitivity over current limits is obtained by a significant increase of the ${}^{136}\mathrm{Xe}$ mass, the monolithic and homogeneous configuration of the active medium, and the multiparameter measurements of the interactions enabled by the time projection chamber. The detector concept and anticipated performance are presented based upon demonstrated realizable background rates.

This paper presents a new quenching circuit (QC) and single photon avalanche diode (SPAD) implemented in TSMC CMOS 65 nm technology. The QC was optimized for single photon timing resolution (SPTR) with a view to an implementation in a 3D digital SiPM. The presented QC has a timing jitter of 4 ps full width at half maximum (FWHM) and the SPAD and QC has a 7.8 ps FWHM SPTR. The QC adjustable threshold allows timing resolution optimization as well as SPAD excess voltage and rise time characterization. The adjustable threshold, hold-off and recharge are essential to optimize the performances of each SPAD. This paper also provides a better understanding of the different contributions to the SPTR. A study of the contribution of the SPAD excess voltage variation combined to the QC time propagation delay variation is presented. The proposed SPAD and QC eliminates the SPAD excess voltage contribution to the SPTR for excess voltage higher than 1 V due to its fixed time propagation delay.

Future tonne-scale liquefied noble gas detectors depend on efficient light detection in the VUV range. In the past years Silicon Photomultipliers (SiPMs) have emerged as a valid alternative to standard photomultiplier tubes or large area avalanche photodiodes. The next generation double beta decay experiment, nEXO, with a 5 tonne liquid xenon time projection chamber, will use SiPMs for detecting the 175nm xenon scintillation light, in order to achieve an energy resolution of σ/Qββ = 1%. This paper presents recent measurements of the VUV-HD generation SiPMs from Fondazione Bruno Kessler in two complementary setups. It includes measurements of the photon detection efficiency with gaseous xenon scintillation light in a vacuum setup and dark measurements in a dry nitrogen gas setup. We report improved photon detection efficiency at 175nm compared to previous generation devices, that would meet the criteria of nEXO. Furthermore, we present the projected nEXO detector light collection and energy resolution that could be achieved by using these SiPMs.

Analog and digital SiPMs have revolutionized the field of radiation instrumentation by replacing both avalanche photodiodes and photomultiplier tubes in many applications. However, multiple applications require greater performance than the current SiPMs are capable of, for example timing resolution for time-of-flight positron emission tomography and time-of-flight computed tomography, and mitigation of the large output capacitance of SiPM array for large-scale time projection chambers for liquid argon and liquid xenon experiments. In this contribution, the case will be made that 3D photon-to-digital converters, also known as 3D digital SiPMs, have a potentially superior performance over analog and 2D digital SiPMs. A review of 3D photon-to-digital converters is presented along with various applications where they can make a difference, such as time-of-flight medical imaging systems and low-background experiments in noble liquids. Finally, a review of the key design choices that must be made to obtain an optimized 3D photon-to-digital converter for radiation instrumentation, more specifically the single-photon avalanche diode array, the CMOS technology, the quenching circuit, the time-to-digital converter, the digital signal processing and the system level integration, are discussed in detail.

Time-of-flight measurements are becoming essential to the advancement of several fields, such as preclinical positron emission tomography and high energy physics. Recent developments in single photon avalanche diode (SPAD)-based detectors have spawned a great interest in digital silicon photomultipliers (dSiPMs). To overcome the tradeoff between the photosensitive area and the processing capabilities in current 2-D dSiPM, we propose a novel 3-D digital SiPM, where the SPAD, designed for maximal photosensitive area, will be stacked in 3-D over the electronic circuits, designed in a CMOS node technology. All readout circuits will be implemented directly under the SPAD real estate, including quenching circuit, time-to-digital converter (TDC) and digital readout electronics. This paper focusses on the TDC element of this system, designed in TSMC CMOS 65 nm. This ring oscillator-based Vernier TDC requires only 25 × 50 μm ² and 160 μW, and achieves 6.9 ps rms timing accuracy.