As stacking technologies, such as 2.5D and 3D packages, continue to accelerate in advanced semiconductor components, the singulation and thinning of Si wafers are becoming increasingly critical. Despite their importance in producing thinner and more reliable Si chips, achieving high reliability remains a challenge, and comprehensive research on the effects of these processing techniques on Si chip integrity is lacking. In this study, the impacts of wafer thinning and singulation on the fracture strength of Si wafers were systematically compared. Three different grinding processes, namely fine grinding, poly-grinding, and polishing, were used for thinning, and the resulting surface morphology and roughness were analyzed using scanning electron microscopy and an interferometer. In addition, the residual mechanical stress on the wafer surface was measured using Raman spectroscopy. The fracture strength of Si wafers and chips was assessed through three-point bending tests. Singulation, including blade dicing, laser dicing, and stealth dicing, was evaluated for its impact on fracture strength. Among these processes, polishing for wafer thinning exhibited the lowest full-width half maximum and intensity ratio of Raman shifts (I480/I520), indicating minimal residual stress and surface defects. Consequently, Si wafers and chips processed through polishing demonstrated the highest fracture strength. Moreover, the 60 µm thick Si wafers and chips showed the highest fracture strength compared with those with thicknesses of 90 and 120 µm, possibly because of the increased flexibility, which mitigates stress. Among the singulation methods, stealth dicing yielded the highest fracture strength, outperforming blade and laser dicing. The combination of wafer thinning via polishing and singulation via stealth dicing presents an optimal solution for producing highly reliable Si chips for 2.5D and 3D packaging. These findings may be valuable in selecting optimal processing technologies for high-reliability Si chip production in industrial settings.

The rapid advancement of microelectronic packaging has created a critical need for lead-free solder joints with enhanced mechanical and thermal reliability. This study introduces a novel approach to improve Sn-3.0Ag-0.5Cu (SAC 305) solder joints by incorporating Sn-decorated multiwalled carbon nanotubes (MWCNTs). To address the poor wettability and agglomeration of carbon nanotubes in molten solder, MWCNTs were functionalized and uniformly coated with ~70 nm Sn nanoparticles via electroless plating. Soldering was conducted using intense pulsed light (IPL), a rapid, energy-efficient heat source, and was compared with conventional reflow soldering. The study systematically investigated the influence of MWCNT content (0, 0.05, 0.1, and 0.2 wt.%) and IPL soldering conditions with pulse numbers: 27–36 for shear tests, and 30–42 for drop impact tests. IPL processing produced thinner Cu₆Sn₅ IMC layers than reflow soldering due to its shorter duration. The composite solder with 0.1 wt.% Sn-decorated MWCNTs achieved the highest density, superior thermal dissipation in LED packages, and maximum shear strength and drop impact resistance. These results demonstrate that optimizing Sn-MWCNT content, especially at 0.1 wt.%, and precisely controlling IPL energy can yield highly reliable, mechanically robust, and thermally efficient lead-free solder joints for advanced electronic packaging.

The adhesive bonding of aluminum with other materials is widely used in the aerospace, marine, automotive and railroad industries that require lightweight materials. Adhesive bonding has the advantages of reduced corrosion, stress concentration, and cost effectiveness. To improve bonding strength and performance, we examined the use of ascorbic acid (vitamin C), which is a water-soluble compound and a natural reducing agent. Owing to its reducing power and acidity, ascorbic acid allows the Al etching process to proceed efficiently to increase the surface roughness and prevent Al oxidation. In addition, this study used an eco-friendly technique of simply immersing aluminum substrates in an ascorbic acid solution with sodium chloride. The surface free energy was evaluated using the sessile drop method and calculated using the Owens–Wendt–Rabel and Kaelble method. Confocal microscope was used to investigate the roughness of the surface, and the functional groups of Al surface were analyzed by X-ray photoelectron spectroscopy. The bonding strength was measured using the single-lap joint shear test. Compared to aluminum without treatment, the bonding strength of a treated AA 6061 was enhanced by 58.6%.