In this study, intense pulsed light (IPL) soldering was employed on Sn-58Bi solder pastes with two distinct particle sizes (T3: 25–45 μm and T9: 1–8 μm) to investigate the correlation between the solder microstructure and mechanical properties as a function of IPL irradiation times. During IPL soldering, a gradual transition from an immature to a refined to a coarsened microstructure was observed in the solder, impacting its mechanical strength (hardness), which initially exhibited a slight increase followed by a subsequent decrease. It is noted that hardness measurements taken during the immature stage may exhibit slight deviations from the Hall–Petch relationship. Experimental findings revealed that as the number of IPL irradiation sessions increased, solder particles progressively coalesced, forming a unified mass after 30 sessions. Subsequently, after 30–40 IPL sessions, notable voids were observed within the T3 solder, while fewer voids were detected at the T9-ENIG interface. Following IPL soldering, a thin layered structure of Ni₃Sn₄ intermetallic compound (IMC) was observed at the Sn-58Bi/ENIG interface. In contrast, reflow soldering resulted in the abundant formation of rod-shaped Ni₃Sn₄ IMCs not only at the reaction interface but also within the solder bulk, accompanied by the notable presence of a P-rich layer beneath the IMC.

As stacking technologies, such as 2.5D and 3D packages, continue to accelerate in advanced semiconductor components, the singulation and thinning of Si wafers are becoming increasingly critical. Despite their importance in producing thinner and more reliable Si chips, achieving high reliability remains a challenge, and comprehensive research on the effects of these processing techniques on Si chip integrity is lacking. In this study, the impacts of wafer thinning and singulation on the fracture strength of Si wafers were systematically compared. Three different grinding processes, namely fine grinding, poly-grinding, and polishing, were used for thinning, and the resulting surface morphology and roughness were analyzed using scanning electron microscopy and an interferometer. In addition, the residual mechanical stress on the wafer surface was measured using Raman spectroscopy. The fracture strength of Si wafers and chips was assessed through three-point bending tests. Singulation, including blade dicing, laser dicing, and stealth dicing, was evaluated for its impact on fracture strength. Among these processes, polishing for wafer thinning exhibited the lowest full-width half maximum and intensity ratio of Raman shifts (I480/I520), indicating minimal residual stress and surface defects. Consequently, Si wafers and chips processed through polishing demonstrated the highest fracture strength. Moreover, the 60 µm thick Si wafers and chips showed the highest fracture strength compared with those with thicknesses of 90 and 120 µm, possibly because of the increased flexibility, which mitigates stress. Among the singulation methods, stealth dicing yielded the highest fracture strength, outperforming blade and laser dicing. The combination of wafer thinning via polishing and singulation via stealth dicing presents an optimal solution for producing highly reliable Si chips for 2.5D and 3D packaging. These findings may be valuable in selecting optimal processing technologies for high-reliability Si chip production in industrial settings.