Chenggang Yan

Dr. Chenggang Yan


Research Focus & Metrics

Academic Career Length

8Years (2019-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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14 March 2023 in IEEE Transactions on Circuits and Systems I: Regular Papers
Verified
Journal Article
Closed access
BWBi Wu
Bi Wu
HZHaonan Zhu
Haonan Zhu
KCKe Chen
Ke Chen
CYChenggang Yan
Chenggang Yan
WLWeiqiang Liu
Weiqiang Liu
Conventional computing architectures based on the von Neumann structure are suffering from the severe ‘memory wall’ issue due to the isolation and speed mismatch between memory and processor. As a promising solution, the concept of logic in-memory (LiM) has been proposed to effectively reduce the overhead of data migration and has been extensively studied in various memory technologies such as SRAM, DRAM, MRAM, ReRAM, etc. Among them, SOT-MRAM combines the advantages of non-volatility, low static power consumption, ultra-fast read/write speed, and high density, has emerged as one of the most promising candidates for low-power LiM implementations. In this paper, four in-memory logic operations, AND, OR, MAJ and full-addition (FA), are proposed based on the Unipolar Switching (US) SOT-MRAM devices. Incorporating the emerging switching behavior of SOT-MRAM, these operations can be performed with the basic memory access operations (read/write) with negligible modifying peripheral circuits. Meanwhile, by optimizing the operation steps, the performance degradation caused by the instability of SOT-MRAM device can be minimized in the proposed LiM architecture. Detailed simulation results show that the proposed design can reduce the latency (energy) of AND, OR operations at least by 71.2%, 74.4% (30.0%, 35.4%) compared with the existing SRAM and STT-MRAM designs. For MAJ and FA operations, the performance is improved by at least 34.7% and 44.8% compared to the existing design. The robustness of our design is demonstrated by the 100% pass of the 1000 samples Monte Carlo simulations for the sufficient switching current margin and the effectiveness of basic operations.

2 August 2023 in IEEE Transactions on Circuits and Systems I: Regular Papers
Verified
Journal Article
Closed access
CYChenggang Yan
Chenggang Yan
XZXuan Zhao
Xuan Zhao
TZTingting Zhang
Tingting Zhang
JGJipeng Ge
Jipeng Ge
CWChenghua Wang
Chenghua Wang
WLWeiqiang Liu
Weiqiang Liu
The Fast Fourier Transformation (FFT), as a high-efficiency algorithm of the Discrete Fourier Transform (DFT), is widely used in Digital Signal Processing (DSP), wireless communication systems, spectrum analysis, and image processing. Approximate computing has shown effectiveness and feasibility to enhance the hardware efficiency of these applications. However, most approximate units in previous works are designed case by case, which has low efficiency and is difficult to find the optimal design. In this paper, a top-down design strategy for approximate floating-point (FP) FFT is proposed, which includes a mantissa bit-width adjustment algorithm and a step-by-step multiplier approximation algorithm. With the mantissa bit-width adjustment algorithm, the approximate 64 FP FFT achieved 50% area reduction and 70% power-delay product (PDP) reduction compared to the exact design with a 60dB Signal Noise Ratio (SNR) requirement, which is also at least 52% and 33% better than the previous approximate FP FFT. After using the step-by-step multiplier approximation algorithm, the approximate mantissa multiplier with an 8-bit fractional part reduced the area and PDP by 81.15% and 93.70%, respectively. The feasibility of the proposed approximate FFT design is verified in the channel estimation module of a wireless communication system, spectrum analysis, and image processing system.

17 April 2024 in IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Verified
Journal Article
Closed access
TYTianyang Yu
Tianyang Yu
BWBi Wu
Bi Wu
KCKe Chen
Ke Chen
CYChenggang Yan
Chenggang Yan
WLWeiqiang Liu
Weiqiang Liu
Leveraging approximate multipliers in approximate neural networks (ApproxNNs) can effectively reduce hardware area and power consumption, making them suitable for edge-side applications. However, the propagation of layer-by-layer errors limits the application of approximate multipliers to large-scale ApproxNNs and complex tasks. Currently, retraining techniques that consider approximate multiplication errors are commonly used to compensate for the accuracy loss. However, due to the irregularity of the errors introduced by approximate multiplier, it is difficult for the existing generic acceleration hardware (e.g., GPU) to efficiently simulate its function and accelerate retraining, which thereby leads to a huge retraining overhead in ApproxNNs’ application. In this article, we propose an ApproxNN framework that introduces errors with regular and controlled positions for high-efficiency retraining of large-scale ApproxNNs. An approximate multiplier design that matches this framework is also presented to verify the effectiveness of the proposed ApproxNN framework. Experiment results demonstrate that the proposed ApproxNN framework is able to achieve up to $46\times $ speedup in retraining, and the proposed approximate multiplier reduces area/power-delay product (PDP) by 31%/63% compared to the exact multiplier. Compared with the floating-point neural network (NN) model, an accuracy decrease of only 1.13% is achieved when applied to ResNet50 on ImageNet dataset with only 15-epochs retraining, which surpasses other state-of-the-art designs.

22 June 2022 in IEEE Transactions on Circuits and Systems I: Regular Papers
Verified
Journal Article
Closed access
BWBi Wu
Bi Wu
ZWZhengkuan Wang
Zhengkuan Wang
KCKe Chen
Ke Chen
CYChenggang Yan
Chenggang Yan
WLWeiqiang Liu
Weiqiang Liu
Recurrent Neural Networks (RNNs) have emerged as one of the most popular neural networks for processing time-series problems, widely used in machine translation, automatic speech recognition, and other natural language processing applications. However, conventional RNNs suffered from vanishing and exploding gradients, resulting in poor network performance in applications with long-term input information. As a variant of RNN, Long Short-Term Memory (LSTM) had been proposed to tackle this issue. Nevertheless, at the same time, LSTM introduces gating units and many additional parameters, which makes it challenging to be implemented directly on resource-limited platforms, such as Field Programmable Gate Arrays (FPGAs). This work first investigated the overall maximum achievable compression rates of different gating units and their correlations. Then, Gating Units Level Balanced Compression (GBC) strategy is proposed. After Top- $k$ pruning, the proposed GBC strategy can attain a compression rate of $36.6\times $ for LSTM. Further, the theoretical analysis indicates that for the existing gating units level LSTM compression variants, the GBC strategy still has further potential for compression. A complementary compression of the GBC strategy is performed on the existing coupled-gate LSTM to verify the analysis. Experimental results show that GBC achieves an additional $32\times $ (overall $42.7\times $ ) compression rate with negligible accuracy loss. Finally, hardware experiments conducted on Xilinx ADM-PCIE-7V3 FPGAs also demonstrate that the accelerator designed in this paper achieves an improvement of 7.4%-191.5% in energy efficiency compared to the state-of-the-art designs.

14 May 2024 in IEEE Transactions on Circuits and Systems I: Regular Papers
Verified
Journal Article
Closed access
HZHaonan Zhu
Haonan Zhu
BWBi Wu
Bi Wu
TYTianyang Yu
Tianyang Yu
KCKe Chen
Ke Chen
CYChenggang Yan
Chenggang Yan
WLWeiqiang Liu
Weiqiang Liu
Due to the physical separation of data processing and storage, the conventional Von Neumann architecture exists excessive data migration overhead to curtail the progress of data-intensive applications. In this way, the Computing-in-Memory (CiM) architecture is proposed. Due to the boolean property of the memory cell, the current CiM mainly focuses on single-bit logic design. For the multi-bit arithmetic design, a prevalent patchwork approach is employed using single-bit logic, leaving the design with insufficient parallelism. This paper proposes a high-performance in-memory multi-bit addition (M-Add) and multiplication (M-Mul) scheme based on unipolar switching SOT-MRAM. For the M-Add scheme, transmission logic-based circuit design is proposed to realize single-step inter-column XOR operations, which is logically fits perfectly the g operator of parallel prefix algorithm. Further, the oBK algorithm is presented to maximize the g operator occupancy. For the M-Mul scheme, mapping the Booth decoder to the control signal of the proposed modified flip-flop queue, only two steps are required to realize the decoding of three encoded signals in parallel. The simulation results indicate the proposed design reduces the latency of N-bit Add (N-bit Mul) by an average of 82.6% (31.5%) compared to state-of-the-art CiM designs. Further, a CNN application based on proposed operations achieves 1.23 TOPS/w on the CIFAR-10 dataset, with an average of 47.57% increase over other CiM designs.

6 October 2021 in IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Verified
Journal Article
Closed access
CYChenggang Yan
Chenggang Yan
JSJie Sun
Jie Sun
WLWeiqiang Liu
Weiqiang Liu
This brief proposes a high spurious-free dynamic range (SFDR) pulse output direct digital frequency synthesizer (PDDS) with low complexity and low power consumption. Independent and uniformly distributed (IUD) high-pass-shaped dither is added to the phase accumulator output, resulting in a wideband spurious-free and low close-in noise floor. The power efficiency and speed are increased by reducing the sampling frequency of the ${m}$ -sequence generator and the high-pass filter (HPF). The SFDR improves by 29 dB as a result of the HPF, which is confirmed with a field-programmable gate array (FPGA) implementation. The application specified integrated circuit (ASIC) occupies $1168~{\mu \text {m}^{2}}$ on nangate 45-nm CMOS process and consumes 80.2 and $398~{\mu }\text{W}$ from a 1.2-V supply with the dither generator running at ${({1}/{4})f_{\text {clk}}}$ and ${f_{\text {clk}}}$ ( ${f_{\text {clk}}}=2$ GHz), respectively.