The thickness of the LPCVD-Si₃N₄ gate dielectric layer significantly influences the electron transport properties of AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs), but the mechanism by which it affects polarization Coulomb field (PCF) scattering remains largely unexplored. In this study, AlGaN/GaN MIS-HEMTs with LPCVD-Si₃N₄ gate dielectric thicknesses of 0 nm, 5 nm, and 20 nm were fabricated, and the influence of LPCVD-Si₃N₄ thickness on PCF scattering was systematically investigated. Through electrical measurements and theoretical calculations, the relationship between LPCVD-Si₃N₄ gate dielectric layer thickness, additional polarization charge (∆ρ), two-dimensional electron gas (2DEG) density, and 2DEG mobility was analyzed. The results show that increasing the LPCVD-Si₃N₄ thickness reduces the vertical electric field in the AlGaN barrier, weakening the inverse piezoelectric effect (IPE) and reducing ∆ρ. Further analysis reveals that the ∆ρ exhibits a non-monotonic dependence on negative gate voltage, initially increasing and subsequently decreasing, due to the competition between strain accumulation and stress relaxation. Meanwhile, the 2DEG mobility limited by PCF (μ_PCF) decreases monotonically with increasing negative gate voltage, mainly due to the progressive weakening of the 2DEG screening effect. The research results reveal the physical mechanism by which LPCVD-Si₃N₄ thickness regulates PCF scattering, providing theoretical guidance for optimizing gate dielectric parameters and enhancing the performance of AlGaN/GaN MIS-HEMTs.