A smooth and dense surface of single-crystalline aluminium nitride thin films has been epitaxially grown on (0 0 0 1)-sapphire substrates by tailoring and optimizing the ammonia flux density during deposition. The aluminium nitride films were deposited by metal organic chemical vapour deposition using the pulsed atomic-layer epitaxy technique at a relatively low growth temperature for ammonia flux densities between 2.2 and 0.2 standard litres per minute (SLM). It is found that the ammonia flux of 0.6 SLM produced the best quality of aluminium nitride films. Field emission scanning electron microscopy as well as atomic force microscopy images revealed a smooth, crack-free and dense surface of aluminium nitride films with the lowest root mean square roughness of 1.61 nm. The in-plane compressive strain inside aluminium nitride films, induced by the hetero-epitaxial growth on sapphire, was examined by focusing on the transition of the E₂ (high) peak frequency obtained from the Raman spectra. The lowest threading and mixed-edge dislocation densities were estimated to be 1.50 × 10⁷ and 3.7 × 10⁹ cm⁻², respectively, which are comparable to those of state-of-the-art aluminium nitride thin films.

In halide perovskite resistive switching memories, the top electrode material influences resistive switching features such as bipolar and unipolar switching, multilayer, and write-once-read-many behaviour.