The polymer films based on chitosan have been studied using dielectric and thermoactivation spectroscopy. Two relaxation processes have been found in the temperature range 0–150°C: the broad α-peak in the vicinity of 120°C and the β-peak in the vicinity of 20°C. The β-peak can be caused by the presence in the polymer of bound water and/or acetic acid remaining after deacetylation, and the α-peak, by the activation of the conduction of chitosan. The activation energies of relaxation processes have been calculated.

The relaxation-time distribution function, its main parameters, and energy distribution of the density of states of charged defects have been calculated for the first time on the basis of the experimental isothermal relaxation curves for dark current in thin films of glassy Ge_0.285Pb_0.15S_0.565 semiconductors. The results obtained confirm the existence of non-Debye dispersion in this system at infralow frequencies and can be used for further study of the electronic properties of disordered semiconductors.

The high dielectric constant ferroelectric-polymer nanocomposite was developed for producing the heat-resistant and chemical stable planar layers. According to the composite coatings formation conditions, the following value ranges of dielectric constant and loss factor were received: 30–400 for dielectric constant and 0.04–0.1 for loss tangent, accordingly. Unlike of composite components, the obtained composite material is characterized by thermo-stability of electrical parameters up to 250 °C. The dielectric frequency spectra of the composite exhibit two clearly visible peaks in contrast to the spectra of the polymer and ferroelectric ceramics. The developed composite material can be used as a built-in film capacitors material in microelectronic devices.

The influence of the method used for preparing As₂Se₃ amorphous layers on the processes of charge transfer and charge accumulation in these structures is studied. Different physical parameters, such as the contact capacitance, the width of the charge accumulation region, and the time of transit of charge carriers through the samples, which characterize the occurring electronic processes, are determined for the layers under investigation.

Tin and iron impurity atoms in the structure of crystalline and vitreous alloys Ga1−yTey (y = 0.6, 0.8) and In1−yTey (y=0.6) are shown to be stabilized in their normal valence states. It is demonstrat

Conductivity of chalcogenide glasses was measured as a function of temperature (290–340 K) and frequency (10⁻⁴–10⁻¹ Hz). Frequency dependence of conductivity can be approximated by a power law G∼ω^s (S < 1). The relaxation maximum of dielectric losses was found. The dielectric constant ∊ decreases with frequency rise. The obtained results are discussed in terms of the defect structure model.