The effects of reconstruction of structural defects at the semiconductor-metal interface caused by a magnetic field are detected. The analysis of the current-voltage and capacitance-voltage characteristics is indicative of a magnetically stimulated increase in the positive charge of the dielectric layer and also a change in the density of surface states depending on the degree of doping of semiconductors under investigation.

Changes of the defect structure of silicon p-type crystal surface layer under the influence of plastic deformation and high temperature annealing in oxygen atmosphere were investigated by deep-level capacitance-modulation spectroscopy (DLCMS) and IR spectroscopy of molecules and atom vibrational levels. Special role of dislocations in the surface layer of silicon during the formation of its energy spectrum and rebuilding the defective structure was established. It is shown that the concentration of linear defects (N ≥ 104 cm−2) enriches surface layer with electrically active complexes (dislocation-oxygen, dislocation-vacancy, and dislocation-interstitial atoms of silicon) which are an effective radiative recombination centers.

The results of studying radiation-stimulated changes in the electrical characteristics of surfacebarrier structures based on p-Si with different values of resistivity (24 and 10 Ω cm) are reported. The state of the surface of the samples under study has been analyzed using atomic-force microscopy. It is shown that irradiation leads to the evolution of structural defects and a variation in the charge state of already existing defects in the structures based on solar-grade silicon (24 Ω cm). Pyramidal defects are formed in the surface layer of p-Si:B (ρ = 24 Ω cm) and partially change their structure as a result of irradiation with X-ray quanta.

Undoped and Mg²⁺-doped β-Ga₂O₃-20% In₂O₃ solid solution microcrystalline samples were synthesized using the high-temperature solid-state chemical reaction method to investigate the influence of native defects on structural, luminescent, and electrical properties. The synthesis process involved varying the oxygen partial pressure by synthesizing samples in either an oxygen or argon atmosphere. X-ray diffraction (XRD) analysis confirmed the monoclinic structure of the samples with the lattice parameters and unit cell volume fitting well to the general trends of the (Ga_1−xIn_x)₂O₃ solid solution series. Broad emission spectra ranging from 1.5 to 3.5 eV were registered for all samples. Luminescence spectra showed violet, blue, and green emission elementary bands. The luminescence intensity was found to vary depending on the synthesis atmosphere. An argon synthesis atmosphere leads to increasing violet luminescence and decreasing green luminescence. Intense bands at about 4.5 and 5.0 eV and a low-intensity band at 3.3 eV are presented in the excitation spectra. The electrical conductivity of the samples was also determined depending on the synthesis atmosphere. The high-resistance samples obtained in an oxygen atmosphere exhibited activation energy of around 0.98 eV. Samples synthesized in an argon atmosphere demonstrated several orders of magnitude higher conductivity with an activation energy of 0.15 eV. The results suggest that the synthesis atmosphere is crucial in determining the luminescent and electrical properties of undoped β-Ga₂O₃-In₂O₃ solid solution samples, offering the potential for various optoelectronic applications.