Luminescence methods for non-contact temperature monitoring have evolved through improvements of hardware and sensor materials. Future advances in this field rely on the development of multimodal sensing capabilities of temperature probes and extend the temperature range across which they operate. The family of Cr-doped oxides appears particularly promising and we review their luminescence characteristics in light of their application in non-contact measurements of temperature over the 5–300 K range. Multimodal sensing utilizes the intensity ratio of emission lines, their wavelength shift, and the scintillation decay time constant. We carried out systematic studies of the temperature-induced changes in the luminescence of the Cr³⁺-doped oxides Al₂O₃, Ga₂O₃, Y₃Al₅O₁₂, and YAlO₃. The mechanism responsible for the temperature-dependent luminescence characteristic is discussed in terms of relevant models. It is shown that the thermally-induced processes of particle exchange, governing the dynamics of Cr³⁺ ion excited state populations, require low activation energy. This then translates into tangible changes of a luminescence parameter with temperature. We compare different schemes of temperature sensing and demonstrate that Ga₂O₃-Cr is a promising material for non-contact measurements at cryogenic temperatures. A temperature resolution better than ±1 K can be achieved by monitoring the luminescence intensity ratio (40–140 K) and decay time constant (80–300 K range).

Zinc gallate (ZnGa₂O₄) spinel ceramics doped with Mn²⁺ ions was prepared by a solid-state reaction at 1200 °C in air. Manganese concentration was equal to 0.05 mol.% of MnO with respect to ZnO. Ceramics produced in this way show an efficient green emission at about 505 nm under UV or X-ray excitations, which is caused by Mn²⁺ ions. This green emission is observed also as a relatively long afterglow (visible to the naked eye in the dark for about one hour) after switching-off the X-ray excitation. Time profiles of the beginning of glow and afterglow have been studied together with thermally stimulated (TSL) and optically stimulated (OSL) luminescence. Experimental results demonstrate a presence of few types of shallow and deep traps responsible for the observed afterglow and TSL/OSL emission of the material. The possibility of pulsed optical stimulation and time-resolved OSL characteristics of ZnGa₂O₄: Mn²⁺ has been reported for the first time. The presented results suggest the ZnGa₂O₄: Mn²⁺ spinel as a promising material for further fundamental research and possibility of application as a green long-lasting phosphor or storage phosphor for TSL/OSL radiation dosimetry.

Detailed investigations of the spectroscopic properties of Cr ³⁺ ions in β-Ga ₂ O ₃ :0.05% Cr ³⁺ single crystals grown by the floating zone technique have been performed in the temperature range 4.5–550 K. The luminescence of Cr ³⁺ ions at low temperatures is due to narrow R-lines ( ² E → ⁴ A ₂ transitions) and their vibronic sidebands, whereas the broad intense band ( ⁴ T ₂ → ⁴ A ₂ transition) dominates at temperatures above 200 K. The vibronic sidebands of R-lines with amplitude of less than 5% of the R ₁ -line at a temperature of 4.5 K cover the region of 700–735 nm. The temperature dependences of the luminescence intensity and the decay time of Cr ³⁺ ions indicate the same mechanism of quenching of R-line intensity and shortening of lifetime for ² E of Cr ³⁺ ions. The temperature dependence of the R ₁ -line decay time of β-Ga ₂ O ₃ :Cr ³⁺ with maximal temperature coefficient |Δτ/Δ T | = 0.023 ms K ⁻¹ at 120 K and maximal specific sensivitity |(Δτ/Δ T )τ ⁻¹ | = 0.017 K ⁻¹ at 160 K indicates an application potential of this phosphor for low-temperature fluorescence thermometry.

Thermally stimulated luminescence (TSL) of β-Ga₂O₃ single crystals doped with Cr³⁺ and Mg²⁺ impurities was investigated. Based on the correlation between the Cr³⁺ concentration and light sum accumulated in the thermoluminescence (TL) glow peak at 285 K, it was concluded that doping of β-Ga₂O₃ with Cr³⁺ ions leads to the formation of electron traps manifested in this peak. The activation energy of peak at 285 K is equal to Ec-0.55 eV and close to E₁. Thus the Cr³⁺e⁻ centers can be a candidate for E₁. The high-temperature TL glow peak at 385 K (Ec-0.94 eV) is related to oxygen vacancies which are created in gallium oxide doped by Mg²⁺ ions to compensate for the negative charge formed by the substitution of gallium sites by magnesium ions.The co-doping of β-Ga₂O₃ crystals with Cr³⁺ and Mg²⁺ impurities leads to the appearance of a new TL glow peak at 320 K with an energy close to E*₂ (Ec-0.7). It is suggested that this peak is formed by defect complex, in particular, oxygen vacancies with Cr³⁺ or Fe³⁺ ions.

We studied an effect of the graphene oxide (GO) layer on the optical and electrical properties of porous silicon (PS) in hybrid PS–GO structure created by electrochemical etching of silicon wafer and deposition of GO from water dispersion on PS. With the help of scanning electron microscopy (SEM), atomic-force microscopy (AFM), and Fourier transform infrared (FTIR) spectroscopy, it was established that GO formed a thin film on the PS surface and is partly embedded in the pores of PS. A comparative analysis of the FTIR spectra for the PS and PS–GO structures confirms the passivation of the PS surface by the GO film. This film has a sufficient transparency for excitation and emission of photoluminescence (PL). Moreover, GO modifies PL spectrum of PS, shifting the PL maximum by 25 nm towards lower energies. GO deposition on the surface of the porous silicon leads to the change in the electrical parameters of PS in AC and DC modes. By means of current–voltage characteristics (CVC) and impedance spectroscopy, it is shown that the impact of GO on electrical characteristics of PS manifests in reduced capacitance and lower internal resistance of hybrid structures.