Neural micro-electrode arrays that are transparent over a broad wavelength spectrum from ultraviolet to infrared could allow for simultaneous electrophysiology and optical imaging, as well as optogenetic modulation of the underlying brain tissue. The long-term biocompatibility and reliability of neural micro-electrodes also require their mechanical flexibility and compliance with soft tissues. Here we present a graphene-based, carbon-layered electrode array (CLEAR) device, which can be implanted on the brain surface in rodents for high-resolution neurophysiological recording. We characterize optical transparency of the device at >90% transmission over the ultraviolet to infrared spectrum and demonstrate its utility through optical interface experiments that use this broad spectrum transparency. These include optogenetic activation of focal cortical areas directly beneath electrodes, in vivo imaging of the cortical vasculature via fluorescence microscopy and 3D optical coherence tomography. This study demonstrates an array of interfacing abilities of the CLEAR device and its utility for neural applications.

Since the 1940s electrocorticography (ECoG) devices and, more recently, in the last decade, micro-electrocorticography (µECoG) cortical electrode arrays were used for a wide set of experimental and clinical applications, such as epilepsy localization and brain–computer interface (BCI) technologies. Miniaturized implantable µECoG devices have the advantage of providing greater-density neural signal acquisition and stimulation capabilities in a minimally invasive fashion. An increased spatial resolution of the µECoG array will be useful for greater specificity diagnosis and treatment of neuronal diseases and the advancement of basic neuroscience and BCI research. In this review, recent achievements of ECoG and µECoG are discussed. The electrode configurations and varying material choices used to design µECoG arrays are discussed, including advantages and disadvantages of µECoG technology compared to electroencephalography (EEG), ECoG, and intracortical electrode arrays. Electrode materials that are the primary focus include platinum, iridium oxide, poly(3,4-ethylenedioxythiophene) (PEDOT), indium tin oxide (ITO), and graphene. We discuss the biological immune response to µECoG devices compared to other electrode array types, the role of µECoG in clinical pathology, and brain–computer interface technology. The information presented in this review will be helpful to understand the current status, organize available knowledge, and guide future clinical and research applications of µECoG technologies.

Emerging electronic skins (E-Skins) offer continuous, real-time electrophysiological monitoring. However, daily mechanical scratches compromise their functionality, underscoring urgent need for self-healing E-Skins resistant to mechanical damage. Current materials have slow recovery times, impeding reliable signal measurement. The inability to heal within 1 minute is a major barrier to commercialization. A composition achieving 80% recovery within 1 minute has not yet been reported. Here, we present a rapidly self-healing E-Skin tailored for real-time monitoring of physical and physiological bioinformation. The E-Skin recovers more than 80% of its functionality within 10 seconds after physical damage, without the need of external stimuli. It consistently maintains reliable biometric assessment, even in extreme environments such as underwater or at various temperatures. Demonstrating its potential for efficient health assessment, the E-Skin achieves an accuracy exceeding 95%, excelling in wearable muscle strength analytics and on-site AI-driven fatigue identification. This study accelerates the advancement of E-Skin through rapid self-healing capabilities.

Metal-oxide-semiconductor (MOS) device is the basic building block for field effect transistors (FET). The majority of thin-film transistors (TFTs) are FETs. When MOSFET are mechanically bent, the MOS structure will be inevitably subject to mechanical strain. In this paper, flexible MOS devices using single crystalline Silicon (Si) and Germanium (Ge) nanomembranes (NM) with SiO₂, SiO, and Al₂O₃ dielectric layers are fabricated on a plastic substrate. The relationships between semiconductor nanomembranes and various oxide materials are carefully investigated under tensile/compressive strain. The flatband voltage, threshold voltage, and effective charge density in various MOS combinations revealed that Si NM−SiO₂ configuration shows the best interface charge behavior, while Ge NM−Al₂O₃ shows the worst. This investigation of flexible MOS devices can help us understand the impact of charges in the active region of the flexible TFTs and capacitance changes under the tensile/compressive strains on the change in electrical characteristics in flexible NM based TFTs.