Currently, the technology of microelectromechanical systems is widely used in the development of high-frequency and ultrahigh-frequency devices. The most important requirements for modern and advanced devices of the ultra-high-frequency range are the reduction of weight and size characteristics, power consumption with an increase in their functionality, operating frequency and level of integration. Radio frequency microelectromechanical switches are developed using the technology of the manufacture of CMOS-integrated circuits. Integrated radio frequency control circuits require low control voltages, the high ratio of losses to the isolation in the open and closed condition, high performance and reliability. This review is devoted to the analytical approach based on the knowledge of materials, basic performance indices and mechanisms of failure, which can be used in the development of radio-frequency microelectromechanical switches.

In this article, based on the developed methodology, the stages of designing two designs of high-performance radio-frequency single-pole single-throw microelectromechanical switches are investigated. These radio-frequency microelectromechanical switches are designed to operate at a central resonant frequency of 3.6 GHz and 3.4 GHz, respectively, as well as to work both in mobile communication devices and in the design of the architecture of 5G mobile networks, in particular in arrays of integrated antennas and radio-frequency interface modules. The manufacture and study of two designed structures are researched. For the first manufactured experimental sample in the open state the insertion loss is no more than −0.69 dB and the reflection loss is −28.35 dB, and in the closed state the isolation value is at least −54.77 dB at a central resonant frequency of 3.6 GHz. For the second in the open state the value of the insertion loss is no more than −0.67 dB and the reflection loss is −20.7 dB, and in the closed state the isolation value is not less than −52.13 dB at the central resonant frequency of 3.4 GHz. Both manufactured experimental samples are characterized by high linearity, as well as a small value of contact resistance in the closed state.

Radio-frequency switches manufactured by microelectromechanical systems technology are now widely used in aerospace systems and other mobile installations for various purposes. In these operating conditions, these devices are often exposed to intense mechanical environmental influences that have a strong impact on their operation. These negative effects can lead to unwanted short-circuit or open-circuit in the radio-frequency transmission line or to irreversible damage to structural elements. Such a violation in the operation of radio-frequency microelectromechanical switches leads to errors and improper functioning of the electronic equipment in which they are integrated. Thus, this review is devoted to the analysis of the origin of these negative intense mechanical effects of the environment, their classification, and analysis, as well as a review of methods to reduce or prevent their negative impact on the design of radio-frequency microelectromechanical switches.

In this article, based on the developed methodology, the stages of designing the sensitive element of a microelectromechanical gyroscope with an open-loop structure are considered. This structure is intended for use in control units for mobile objects such as robots, mobile trolleys, etc. To quickly obtain a ready-made gyroscope, a specialized integrated circuit (SW6111) was selected, for the use of which the electronic part of the sensitive element of the microelectromechanical gyroscope was developed. The mechanical structure was also taken from a simple design. The simulation of the mathematical model was carried out in the MATLAB/Simulink software environment. The mechanical elements and the entire structure were calculated using finite element modeling with ANSYS MultiPhysics CAD tools. The developed sensitive element of the micromechanical gyroscope was manufactured using bulk micromachining technology−silicon-on-insulator−with a structural layer thickness equal to 50 $\mathsf{\mu }$m. Experimental studies were carried out using a scanning electron microscope and a contact profilometer. Dynamic characteristics were measured using a Polytec MSA-500 microsystem analyzer. The manufactured structure has low topological deviations. Calculations and experiments showed fairly accurate results for the dynamic characteristics, with an error of less than 3% for the first iteration of the design.

This paper is devoted to the selection of the optimal material for the structural layer of microelectromechanical switches in order to reduce or completely eliminate the stiction of the moving parts of the structure to the fixed, as well as to minimize the values of the control voltages and switching speed without compromising reliability using the Ashby approach. The choice of the most suitable structural layer material is represented by performance indices for a number of key parameters of microelectromechanical switches. It is established that aluminum-based alloys and metals are the most preferable than other available materials for the structural layer of microelectromechanical switches.

This theses the linear acceleration sensor design with three axis of sensitivity is researched. Parameterized geometry and finite element model for modal analysis are developed in the ANSYS program. Behavioral description of the study design is developed with language VHDL-AMS to simulate the sensor operation under the influence of linear acceleration along three axis of sensitivity. On the basis of research results three-axis device sensitivity, cross-sensitivity, duration transients are specified. As part of the work the experimental sensor prototypes are fabricated.