An analytical approach based on the thermoelectrical analogy to calculate the maximum channel temperature of multifinger AlGaN/GaN HEMT transistor is presented. The model is capable of predicting the maximum channel temperature, including the impact of the nonlinearity of thermal conductivity for every single gate with excellent accuracy. The model remains invariant under device scaling up and down and gives an accurate estimation for any number of gate fingers. Furthermore, the temperature field fluctuation due to the interaction between gates and variation in the number of gate fingers can be easily identified by the model. The validity of the proposed approach has been testified by comparing the results with those from infrared spectroscopy and numerical simulations for different AlGaN/GaN HEMT transistors with a different number of gates. The significance of models is justified by its ability to evaluate the temperature of any gate finger with high accuracy. Such an ability is particularly highly important while optimizing the structure layout and cooling system for high-power AlGaN/GaN HEMT transistors. The model can serve as a powerful tool for power devices and microwave IC designers and can be easily incorporated into SPICE empirical or physical-based models.

Radio-frequency switches manufactured by microelectromechanical systems technology are now widely used in aerospace systems and other mobile installations for various purposes. In these operating conditions, these devices are often exposed to intense mechanical environmental influences that have a strong impact on their operation. These negative effects can lead to unwanted short-circuit or open-circuit in the radio-frequency transmission line or to irreversible damage to structural elements. Such a violation in the operation of radio-frequency microelectromechanical switches leads to errors and improper functioning of the electronic equipment in which they are integrated. Thus, this review is devoted to the analysis of the origin of these negative intense mechanical effects of the environment, their classification, and analysis, as well as a review of methods to reduce or prevent their negative impact on the design of radio-frequency microelectromechanical switches.

A method for the design of high-speed components of integrated circuits based on III–V semiconductors using complementary logic principles, which provides an increase in performance and degree of integration of microwave integrated circuits, is considered.

In this paper, we consider the problem of the research and development of high-speed semiconductor photodetectors suitable for operation as parts of on-chip optical interconnections together with the high-speed laser modulators based on the A^IIIB^V nanoheterostructures. This research is aimed at the development of the models and modelling aids designed for the simulation of carrier transport and accumulation processes taking place in on-chip photosensitive devices during the detection of subpicosecond laser pulses. Another aim of the paper is to apply the aforementioned aids for the investigation of GaAs p-i-n and Schottky-barrier photodiodes. We propose the non-stationary drift-diffusion models, an original numerical simulation technique and the applied software allowing one to simulate the photosensitive devices with different electrophysical, constructive and technological parameters. We have taken into account different kinds of carrier generation and recombination processes, the effects of electron intervalley transition and carrier drift velocity saturation in order to improve the simulation results’ adequacy. We have concluded that the influence of these effects on the performance of photodetectors for on-chip optical interconnections is significant. The response time of GaAs p-i-n and Schottky-barrier photodiodes calculated taking into account the drift velocity dependence on electric field intensity is insufficient for the adequate detection of subpicosecond laser pulses. According to the simulation results, it is reasonable to develop the methods aimed at the increase in the drift velocity of charge carriers in the photodetector active region by means of built-in electric field reduction.

A method for designing injection lasers with functionally integrated optical-radiation frequency modulators based on spatially shifted quantum wells in conduction and valence bands is proposed. The structure and variants of band diagrams of functionally integrated laser modulators are considered. It is shown that, in the proposed nanoheterostructures, maximum modulation frequencies are determined by the time of controlled relocation of charge-carrier density maxima in quantum domains and correspond to the terahertz range.