轩 张

Mr. 轩 张

orcid

Research Focus & Metrics

Academic Career Length

2Years (2025-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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24 December 2025 in Micromachines
Verified
Journal Article
Open access
PDF file
RZRongguang Zhang Rongguang Zhang
Rongguang Zhang Rongguang Zhang
Xuanzhi ZhangXuanzhi Zhang
Xuanzhi Zhang
JSJianfeng Sun
Jianfeng Sun
SHShize Huang
Shize Huang
轩张轩 张
轩 张
WSWeiming Shu
Weiming Shu
Gas-assisted coaxial electrospinning (GACES), a simple and versatile technique for the large-scale fabrication of coaxial nanofiber membranes, possesses significant industrial potential across advanced manufacturing sectors including semiconductors—particularly for fabricating high-precision dielectric layers, high-uniformity encapsulation materials, and flexible semiconductor substrates requiring tailored core-shell architectures. However, there is still a lack of relevant studies on the effective regulation of the core-shell structures of coaxial fibers based on GACES, which greatly limits the batch preparation and wide application of coaxial fibers. Finite element simulation analysis of the flow field and development of the coaxial jet mechanics model with a gas-driven flow field—two key methodologies in this study—successfully uncovered the influence mechanism of gas-assisted flow fields on the core-shell structures of coaxial nanofibers. By adjusting the gas-assisted flow fields parameters, we reduced the total diameter of coaxial fibers by 47.33% (average fiber diameter: 334.12 ± 16.29 nm → 175.98 ± 1.18 nm), decreased the shell thickness by 72.98%, increased the core-shell ratio by 289% (core-shell ratio: 0.49 → 1.91), and improved the uniformity of the total diameter distribution of coaxial fibers by 30.64%. This study delivers a practical conceptual framework and robust experimental underpinnings for the scalable fabrication of coaxial nanofiber membranes with controllable core-shell structures, thereby promoting their practical application in semiconductor devices such as ultra-thin dielectric layers, precisely structured encapsulation materials, and high-uniformity templates for nanoscale circuit patterning.