InGaAs-based photodetectors have been generally used for detection in the short-wave infrared (SWIR) region. However, the epitaxial process used to grow these materials is expensive; therefore, InGaAs-based photodetectors are limited to space exploration and military applications. Many researchers have expended considerable efforts to address the problem of SWIR photodetector development using lead sulfide (PbS) quantum dots (QDs). Along with their cost-efficient solution processability and flexible substrate compatibility, PbS QDs are highly interesting for the quantum-size-effect tunability of their bandgaps, spectral sensitivities, and wide absorption ranges. However, the performance of PbS QD-based SWIR photodetectors is limited owing to inefficient carrier transfer and low photo and thermal stabilities. In this study, a simple method is proposed to overcome these problems by incorporating CdS in PbS QD shells to provide efficient carrier transfer and enhance the long-term stability of SWIR photodetectors against oxidation. The SWIR photodetectors fabricated using thick-shell PbS/CdS QDs exhibited a high on/off (light/dark) ratio of 11.25 and a high detectivity of 4.0 × 10¹² Jones, which represents a greater than 10 times improvement in these properties relative to those of PbS QDs. Moreover, the lifetimes of thick-shell PbS/CdS QD-based SWIR photodetectors were significantly improved owing to the self-passivation of QD surfaces.

In this study, we demonstrated a highly selective chemiresistive-type NO₂ gas sensor using facilely prepared carbon dot (CD)-decorated single-walled carbon nanotubes (SWCNTs). The CD-decorated SWCNT suspension was characterized using transmission electron microscopy (TEM), X-ray diffraction (XRD), and UV-visible spectroscopy, and then spread onto an SiO₂/Si substrate by a simple and cost-effective spray-printing method. Interestingly, the resistance of our sensor increased upon exposure to NO₂ gas, which was contrary to findings previously reported for SWCNT-based NO₂ gas sensors. This is because SWCNTs are strongly doped by the electron-rich CDs to change the polarity from p-type to n-type. In addition, the CDs to SWCNTs ratio in the active suspension was critical in determining the response values of gas sensors; here, the 2:1 device showed the highest value of 42.0% in a sensing test using 4.5 ppm NO₂ gas. Furthermore, the sensor selectively responded to NO₂ gas (response ~15%), and to other gases very faintly (NO, response ~1%) or not at all (CO, C₆H₆, and C₇H₈). We propose a reasonable mechanism of the CD-decorated SWCNT-based sensor for NO₂ sensing, and expect that our results can be combined with those of other researches to improve various device performances, as well as for NO₂ sensor applications.

A cadmium selenide/zinc sulfide (CdSe/ZnS) quantum dot (QD)-based multi-level memory device with the structure [ITO/PEDOT:PSS/QDs/ZnO/Al:Al₂O₃/QDs/Al] was fabricated via a spin-coating method used to deposit thin films. Two layers of QD thin films present in the device act as charge storage layers to form three distinct states. Zinc oxide (ZnO) and aluminum oxide (Al₂O₃) were added to prevent leakage. ZnO NPs provide orthogonality between the two QD layers, and a poly(3,4-ethylenedioxythio-phene): poly(styrenesulfonate) (PEDOT:PSS) thin film was formed for effective hole injection from the electrodes. The core/shell structure of the QDs provides the quantum well, which causes the trapping of injected charges. The resistance changes according to the charging and discharging of the QDs’ trap site and, as a result, the current through the device also changes. There are two quantum wells, two current changes, and three stable states. The role of each thin film was confirmed through I–V curve analysis and the fabrication conditions of each thin film were optimized. The synthesized QDs and ZnO nanoparticles were evaluated via X-ray diffraction, transmission electron microscopy, and absorbance and photoluminescence spectroscopy. The measured write voltages of the fabricated device were at 1.8 and 2.4 V, and the erase voltages were −4.05 and −4.6 V. The on/off ratio at 0.5 V was 2.2 × 10³. The proposed memory device showed retention characteristics of ≥100 h and maintained the initial write/erase voltage even after 200 iterative operations.