We attempted surface modification in ZnO nanoparticles (NPs) synthesized by the sol–gel process with polyvinyl pyrrolidone (PVP) applied to bulk-heterojunction polymer solar cells (PSCs) as an electron transport layer (ETL). In general, ZnO NPs have trap sites due to oxygen vacancies which capture electrons and degrade the performance of the PSCs. Devices with six different PVP:Zn ratios (0.615 g, 1.230 g, 1.846 g, 2.460 g, 3.075 g, and 3.690 g) were fabricated for surface modification, and the optimized PVP:Zn ratio (2.460 g) was found for PSCs based on P3HT/PCBM. The power conversion efficiency (PCE) of the fabricated PSCs with PVP-capped ZnO exhibited a significant increase of approximately 21% in PCE and excellent air-stability as compared with the uncapped ZnO-based PSCs.

We propose a solution-processable ultraviolet (UV) photodetector with a pn-heterojunction hybrid photoactive layer (HPL) that is composed of poly-n-vinylcarbazole (PVK) as a p-type polymer and ZnO nanoparticles (NPs) as an n-type metal oxide. To observe the effective photo-inducing ability of the UV photodetector, we analyzed the optical and electrical properties of HPL which is controlled by the doping concentration of n-type ZnO NPs in PVK matrix. Additionally, we confirmed that the optical properties of HPL dominantly depend on the ZnO NPs from the UV-vis absorption and the photoluminescence (PL) spectral measurements. This HPL can induce efficient charge transfer in the localized narrow pn-heterojunction domain and increases the photocurrent gain. It is essential that proper doping concentration of n-type ZnO NPs in polymer matrix is obtained to improve the performance of the UV photodetector. When the ZnO NPs are doped with the optimized concentration of 3.4 wt.%, the electrical properties of the photocurrent are significantly increased. The ratio of the photocurrent was approximately 10³ higher than that of the dark current.

Shortwave infrared (SWIR) sensors have attracted interest due to their usefulness in applications like military and medical equipment. SWIR sensors based on various materials are currently being studied. However, most SWIR detectors need additional optical filters and cooling systems to detect specific wavelengths. In order to overcome these limitations, we proposed a solution processed SWIR sensor that can operate at room temperature using lead chloride (PbS) QDs as a photoactive layer. Additionally, we adapted zinc oxide (ZnO) nanoparticles (NPs) as an electron transport layer (ETL) to improve the sensitivity of a PbS SWIR sensor. In this study, PbS SWIR sensors with and without a ZnO NPs layer were fabricated and their current–voltage (I–V) characteristics were measured. The on/off ratio of the PbS SWIR sensor with ZnO NPs was 2.87 times higher than that of the PbS SWIR sensor without ZnO NPs at the maximum current difference. The PbS SWIR sensor with ZnO NPs showed more stable current characteristics than that without ZnO NPs because of the ZnO NPs’ high electron mobility and proper lowest unoccupied molecular orbital (LUMO) level.

In bulk heterojunction polymer solar cells (BHJ-PSCs), poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonate) (PEDOT:PSS) is the most commonly used hole selective interlayer (HSIL). However, its acidity, hygroscopic nature, and the use of indium tin oxide (ITO) etching can degrade the overall photovoltaic performance and the air-stability of BHJ-PSCs. Solvent engineering is considered as a facile approach to overcome these issues. In this work, we engineered the HSIL using ethanol (ET) treated PEDOT:PSS to simultaneously enhance the photovoltaic performance properties and air-stability of the fabricated devices. We systematically investigated the influence of ET on the microstructural, morphological, interfacial characteristics of modified HSIL and photovoltaic characteristics of BHJ-PSCs. Compared with the BHJ-PSC with pristine PEDOT:PSS, a significant enhancement of power conversion efficiency (~17%) was witnessed for the BHJ-PSC with PEDOT:PSS-ET (v/v, 1:0.5). Consequently, the BHJ-PSC with PEDOT:PSS-ET (v/v, 1:0.5) as HSIL exhibited remarkably improved air-stability.

A cadmium selenide/zinc sulfide (CdSe/ZnS) quantum dot (QD)-based multi-level memory device with the structure [ITO/PEDOT:PSS/QDs/ZnO/Al:Al₂O₃/QDs/Al] was fabricated via a spin-coating method used to deposit thin films. Two layers of QD thin films present in the device act as charge storage layers to form three distinct states. Zinc oxide (ZnO) and aluminum oxide (Al₂O₃) were added to prevent leakage. ZnO NPs provide orthogonality between the two QD layers, and a poly(3,4-ethylenedioxythio-phene): poly(styrenesulfonate) (PEDOT:PSS) thin film was formed for effective hole injection from the electrodes. The core/shell structure of the QDs provides the quantum well, which causes the trapping of injected charges. The resistance changes according to the charging and discharging of the QDs’ trap site and, as a result, the current through the device also changes. There are two quantum wells, two current changes, and three stable states. The role of each thin film was confirmed through I–V curve analysis and the fabrication conditions of each thin film were optimized. The synthesized QDs and ZnO nanoparticles were evaluated via X-ray diffraction, transmission electron microscopy, and absorbance and photoluminescence spectroscopy. The measured write voltages of the fabricated device were at 1.8 and 2.4 V, and the erase voltages were −4.05 and −4.6 V. The on/off ratio at 0.5 V was 2.2 × 10³. The proposed memory device showed retention characteristics of ≥100 h and maintained the initial write/erase voltage even after 200 iterative operations.