To achieve optimal thermoelectric performance, it is crucial to manipulate the scattering processes within materials to decouple the transport of phonons and electrons. In half-Heusler (hH) compounds, selective defect reduction can significantly improve performance due to the weak electron-acoustic phonon interaction. This study utilized Sb-pressure controlled annealing process to modulate the microstructure and point defects of Nb_0.55Ta_0.40Ti_0.05FeSb compound, resulting in a 100% increase in carrier mobility and a maximum power factor of 78 µW cm⁻¹ K⁻², approaching the theoretical prediction for NbFeSb single crystal. This approach yielded the highest average zT of ~0.86 among hH in the temperature range of 300-873 K. The use of this material led to a 210% enhancement in cooling power density compared to Bi₂Te₃-based devices and a conversion efficiency of 12%. These results demonstrate a promising strategy for optimizing hH materials for near-room-temperature thermoelectric applications.

AgSbTe₂ is a promising p-type thermoelectric material operating in the mid-temperature regime. To further enhance its thermoelectric performance, previous research has mainly focused on reducing lattice thermal conductivity by forming ordered nanoscale domains for instance. However, the relatively low power factor is the main limitation affecting the power density of AgSbTe₂-based thermoelectric devices. In this work, we demonstrate that hole-doped AgSbTe₂ with Sn induces the formation of a new impurity band just above the valence band maximum. This approach significantly improves the electrical transport properties, contrary to previous strategies that focused on reducing lattice thermal conductivity. As a result, we achieve a record-high power factor of 27 μWcm⁻¹K⁻² and a peak thermoelectric figure of merit zT of 2.5 at 673 K. This exceptional performance is attributed to an increased hole concentration resulting from the formation of the impurity band and a lower formation energy of the defect complexes (\({V}_{{Ag}}^{1-}\) + \({{Sn}}_{{Sb}}^{1-}\)). Besides, the doped materials exhibit a significantly improved Seebeck coefficient by inhibiting bipolar conductivity and preventing the formation of n-type Ag₂Te. Additionally, the optimized AgSbTe₂ is used to fabricate a unicouple thermoelectric device that achieves energy conversion efficiencies of up to 12.1% and a high power density of 1.13 Wcm⁻². This study provides critical insights and guidance for optimizing the performance of p-type AgSbTe₂ in thermoelectric applications.

Fluorescent sensors are indispensable tools in fields such as molecular biology, clinical diagnostics, biotechnology, and environmental monitoring, due to their high sensitivity, selectivity, biocompatibility, rapid response, and ease of use. However, conventional fluorophores often suffer from aggregation-caused quenching (ACQ), leading to diminished fluorescence in the aggregated state. The advent of aggregation-induced emission (AIE) luminogens, which exhibit enhanced fluorescence upon aggregation, offers a powerful solution to this limitation. Their unique photophysical properties have made AIE-based materials highly valuable for diverse applications, including biomedical imaging, optoelectronics, stimuli-responsive systems, drug delivery, and chemical sensing. Notably, AIE-based fluorescent probes are emerging as attractive alternatives to traditional analytical methods owing to their low cost, fast detection, and high selectivity. Over the past two decades, considerable progress has been made in the rational design and development of AIE-active small-molecule fluorescent probes for detecting a wide variety of analytes, such as biologically relevant molecules, drug compounds, volatile organic compounds (VOCs), explosives, and contaminants associated with forensic and food safety analysis. This review highlights recent advances in organic AIE-based fluorescent probes, beginning with the fundamentals of AIE and typical “turn-on” sensing mechanisms, and concluding with a discussion of current challenges and future opportunities in this rapidly evolving research area.

Halide perovskites show ubiquitous presences in growing fields at both fundamental and applied levels. Discovery, investigation, and application of innovative perovskites are heavily dependent on the synthetic methodology in terms of time-/yield-/effort-/energy- efficiency. Conventional wet chemistry method provides the easiness for growing thin film samples, but represents as an inefficient way for bulk crystal synthesis. To overcome these, here we report a universal solid state-based route for synthesizing high-quality perovskites, by means of simultaneously applying both electric and mechanical stress fields during the synthesis, i.e., the electrical and mechanical field-assisted sintering technique. We employ various perovskite compositions and arbitrary geometric designs for demonstration in this report, and establish such synthetic route with uniqueness of ultrahigh yield, fast processing and solvent-free nature, along with bulk products of exceptional quality approaching to single crystals. We exemplify the applications of the as-synthesized perovskites in photodetection and thermoelectric as well as other potentials to open extra chapters for future technical development.