Computational efficient, quasi-3D model for designing body wearable thermoelectric generators and experimental verification.

Thermoelectric coolers are attracting significant attention for replacing age-old cooling and refrigeration devices. Localized cooling by wearable thermoelectric coolers will decrease the usage of traditional systems, thereby reducing global warming and providing savings on energy costs. Since human skin as well as ambient air is a poor conductor of heat, wearable thermoelectric coolers operate under huge thermally resistive environment. The external thermal resistances greatly influence thermoelectric material behavior, device design, and device performance, which presents a fundamental challenge in achieving high efficiency for on-body applications. Here, we examine the combined effect of heat source/sink thermal resistances and thermoelectric material properties on thermoelectric cooler performance. Efficient thermoelectric coolers demonstrated here can cool the human skin up to 8.2 °C below the ambient temperature (170% higher cooling than commercial modules). Cost-benefit analysis shows that cooling over material volume for our optimized thermoelectric cooler is 500% higher than that of the commercial modules.

Traditional research on thermoelectric materials focused on improving the figure-of-merit z T to enhance the energy conversion efficiency. With further growth and commercialization of thermoelectric technology beyond niche applications, other factors such as materials availability, toxicity, cost, recyclability, thermal stability, chemical and mechanical properties, and ease of fabrication become important for making viable technologies. Several silicide alloys were identified that have the potential to fulfill these requirements. These materials are of interest due to their abundancy in earth’s crust (e.g., silicon), non-toxicity, and good physical and chemical properties. In this paper, an overview of the silicide thermoelectrics from traditional alloys to advanced material structures is presented. In addition, some of the most effective approaches as well as fundamental physical concepts for designing and developing efficient thermoelectric materials are presented and future perspectives are discussed.

To achieve optimal thermoelectric performance, it is crucial to manipulate the scattering processes within materials to decouple the transport of phonons and electrons. In half-Heusler (hH) compounds, selective defect reduction can significantly improve performance due to the weak electron-acoustic phonon interaction. This study utilized Sb-pressure controlled annealing process to modulate the microstructure and point defects of Nb_0.55Ta_0.40Ti_0.05FeSb compound, resulting in a 100% increase in carrier mobility and a maximum power factor of 78 µW cm⁻¹ K⁻², approaching the theoretical prediction for NbFeSb single crystal. This approach yielded the highest average zT of ~0.86 among hH in the temperature range of 300-873 K. The use of this material led to a 210% enhancement in cooling power density compared to Bi₂Te₃-based devices and a conversion efficiency of 12%. These results demonstrate a promising strategy for optimizing hH materials for near-room-temperature thermoelectric applications.

Thermoelectric generators (TEGs) offer cost-effective and sustainable solid-state energy conversion mechanism from wasted heat into useful electrical power. Thermoelectric (TE) materials based upon bismuth telluride (BiTe) systems are widely utilized in applications ranging from energy generation to sensing to cooling. There is demand for BiTe materials with high figure of merit (zT) and TEG modules with high conversion efficiency over intermediate temperatures (25°C–250°C). Here we provide fundamental breakthrough in design of BiTe-based TE materials and utilize them to demonstrate modules with outstanding conversion efficiency of 8%, which is 40% higher compared with state-of-the-art commercial modules. The average zT of 1.08 for p-type and 0.84 for n-type bismuth telluride alloys is obtained between 25 and 250°C. The significant enhancement in zT is achieved through compositional and defect engineering in both p- and n-type materials. The high conversion efficiency accelerates the transition of TEGs for waste heat recovery.