The authors report compact and chemically homogeneous In-rich InGaN layers directly grown on Si (111) by plasma-assisted molecular beam epitaxy. High structural and optical quality is evidenced by transmission electron microscopy, near-field scanning optical microscopy, and X-ray diffraction. Photoluminescence emission in the near-infrared is observed up to room temperature covering the important 1.3 and 1.55 μm telecom wavelength bands. The n-InGaN/p-Si interface is ohmic due to the absence of any insulating buffer layers. This qualitatively extends the application fields of III-nitrides and allows their integration with established Si technology.

Background: Engineered stone silicosis is an emerging disease in many countries worldwide produced by the inhalation of respirable dust of engineered stone. This silicosis has a high incidence among young workers, with a short latency period and greater aggressiveness than silicosis caused by natural materials. Although the silica content is very high and this is the key factor, it has been postulated that other constituents in engineered stones can influence the aggressiveness of the disease. Different samples of engineered stone countertops (fabricated by workers during the years prior to their diagnoses), as well as seven lung samples from exposed patients, were analyzed by multiple techniques. Results: The different countertops were composed of SiO₂ in percentages between 87.9 and 99.6%, with variable relationships of quartz and cristobalite depending on the sample. The most abundant metals were Al, Na, Fe, Ca and Ti. The most frequent volatile organic compounds were styrene, toluene and m-xylene, and among the polycyclic aromatic hydrocarbons, phenanthrene and naphthalene were detected in all samples. Patients were all males, between 26 and 46 years-old (average age: 36) at the moment of the diagnosis. They were exposed to the engineered stone an average time of 14 years. At diagnosis, only one patient had progressive massive fibrosis. After a follow-up period of 8 ± 3 years, four patients presented progressive massive fibrosis. Samples obtained from lung biopsies most frequently showed well or ill-defined nodules, composed of histiocytic cells and fibroblasts without central hyalinization. All tissue samples showed high proportion of Si and Al at the center of the nodules, becoming sparser at the periphery. Al to Si content ratios turned out to be higher than 1 in two of the studied cases. Correlation between Si and Al was very high (r = 0.93). Conclusion: Some of the volatile organic compounds, polycyclic aromatic hydrocarbons and metals detected in the studied countertop samples have been described as causative of lung inflammation and respiratory disease. Among inorganic constituents, aluminum has been a relevant component within the silicotic nodule, reaching atomic concentrations even higher than silicon in some cases. Such concentrations, both for silicon and aluminum showed a decreasing tendency from the center of the nodule towards its frontier.

The optical properties of 5wt% Fe₃O₄-TiO₂ thin films were evaluated in detail with the aim of proposing a mechanism for solar photocatalytic processes and highlighting the advantages over the use of bare TiO₂. The results showed that the incorporation of 5wt% Fe₃O₄ enhanced the optical properties by a redshift to a wavelength in the visible range, reducing the anatase/rutile band gap energy from 3.2 eV to 2.8 eV. Photoluminescence studies reveal a superior separation efficiency of photoexcited electron-hole pairs when Fe₃O₄ nanoparticles (NPs) are present in the photocatalyst. X-ray photoelectron spectroscopy spectra confirm the presence of Fe₃O₄ and existence of a chemical bonding between TiO₂ and Fe₃O₄ NPs. Moreover, in this study, a mechanism of solar photocatalytic processes involving Fe₃O₄-TiO₂ thin films is proposed and it is supported by experimental results. Finally, solar photocatalytic experiments were carried out, indicating that the effectiveness for the removal of the selected pharmaceutical is considerably improved when the composite material is used as catalyst. Furthermore, it was demonstrated that the photocatalytic activity of the prepared Fe₃O₄-TiO₂ thin films depends on their thickness, achieving the highest pharmaceutical removal yields using the 2 µm thick sample. The stability and reusability of the catalyst was confirmed studying the photocatalytic activity over three cycles.

We report an investigation on the morphological, structural, and optical properties of large size wurtzite GaAs nanowires, low doped with Mg, grown on GaAs(111)B and Si(111) substrates. A higher density of vertical nanowires was observed when grown upon GaAs(111)B. Very thin zinc-blende segments are observed along the axis of the nanowires with a slightly higher linear density being found on the nanowires grown on Si(111). Low temperature cathodoluminescence and photoluminescence measurements reveal an emission in the range 1.40–1.52 eV related with the spatial localization of the charge carriers at the interfaces of the two crystalline phases. Mg related emission is evidenced by cathodoluminescence performed on the GaAs epilayer. However, no direct evidence for a Mg related emission is found for the nanowires. The excitation power dependency on both peak energy and intensity of the photoluminescence gives a clear evidence for the type II nature of the radiative transitions. From the temperature dependence on the photoluminescence intensity, non-radiative de-excitation channels with different activation energies were found. The fact that the estimated energies for the escape of the electron are higher in the nanowires grown on Si(111) suggests the presence of wider zinc-blende segments.

In this work, we report on the epitaxial growth of high-quality cubic indium oxide thick films on c-plane sapphire substrates using a two-step growth process. The epitaxial relationship of In2O3 on (0001) Al2O3 has been investigated. The (222) plane spacing and lattice parameter of a most strain-relaxed high-quality In2O3 film have been determined to be 292.58 pm and 1013.53 pm, respectively. The electronic properties in dependence of the film thickness are interpreted using a three-region model. The density at the surface and interface totals (3.3±1.5)×1013cm-2, while the background electron density in the bulk was determined to be (2.4±0.5)×1018cm-3. Furthermore, post treatments such as irradiation via ultraviolet light and ozone oxidation have been found to influence only the surface layer, while the bulk electronic properties remain unchanged.