To improve the low deposition rate of atomic layer deposition (ALD), we introduced filtered cathodic vacuum arc (FCVA) technology for the high-rate deposition of Al₂O₃ films. The FCVA-Al₂O₃ process achieved a deposition rate of 15 nm/min, which is approximately an order of magnitude higher than that of conventional ALD. This process does not involve hydrogen, preventing hydrogen ion penetration and thereby ensuring the high stability of the oxide TFT backplane. FCVA-Al₂O₃ films were integrated with inkjet-printed (IJP) organic layers to form a hybrid thin-film encapsulation (TFE) structure for OLEDs. The resulting laminated encapsulation exhibited excellent water vapor barrier properties (WVTR, Water Vapor Transmission Rate of 1.2 × 10⁻⁴ g/m²/day), demonstrating the great potential of FCVA for packaging high-throughput and high-performance flexible electronics. In addition to evaluating barrier properties (surface roughness, residual stress, and WVTR) to assess the suitability of TFE, the impact of FCVA technology was assessed via oxide thin-film transistor (TFT) electrical performance and OLED device reliability tests. The electrical properties of oxide TFTs show no significant degradation post-encapsulation, while OLED performance, despite a slight increase in current efficiency, remains effectively unchanged. Additionally, the lifetime of OLED devices reached 300 h under accelerated aging conditions (85 °C, 85% relative humidity), which is nearly twice that of devices without FCVA-Al₂O₃ encapsulation.