He Yuting

Dr. He Yuting

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Research Focus & Metrics

Academic Career Length

2Years (2025-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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24 September 2025 in Carbon
Verified
Journal Article
Closed access
HYHe Yuting
He Yuting
FXFeng Xiong
Feng Xiong
JJJinbao Jiang
Jinbao Jiang
BZBiyuan Zheng
Biyuan Zheng
WXWei Xu
Wei Xu
ZZZhihong Zhu
Zhihong Zhu

26 January 2026 in Preprints.org
Verified
Preprint
Open access
PDF file
HYHe Yuting
He Yuting
JJJinbao Jiang
Jinbao Jiang
FXFeng Xiong
Feng Xiong
Zhihong ZhuZhihong Zhu
Zhihong Zhu
Reconfigurable logic is crucial for future adaptive computing but are challenging to realize with conventional complementary metal-oxide-semiconductor technology due to the limited field-effect characteristics of the fundamental silicon devices. Two-dimensional materials offer a promising platform, yet enhancing their functional versatility requires novel operational mechanisms. Here, we demonstrate a single WSe₂/h-BN/graphene heterojunction capable of dynamically switching between distinct logic functions—XNOR and IMP—simply by modulating the drain-source voltage. At a low bias of 0.3 V, the carrier distribution is governed by capacitive coupling, realizing an XNOR gate. Increasing the bias to 3 V activates Fowler–Nordheim tunneling between the graphene floating gate and the drain, enabling IMP logic operation. The interplay and voltage-induced transition between these two physical mechanisms underpins the device's multifunctional capability. This work introduces a novel operational strategy for two-dimensional material-based reconfigurable logic, providing a pathway toward compact, adaptive hardware for post-CMOS computing.

9 March 2026 in Nanomaterials
Verified
Journal Article
Open access
PDF file
HYHe Yuting
He Yuting
JJJinbao Jiang
Jinbao Jiang
FXFeng Xiong
Feng Xiong
Zhihong ZhuZhihong Zhu
Zhihong Zhu
Reconfigurable logic is crucial for future adaptive computing, but is challenging to realize with conventional complementary metal-oxide-semiconductor technology due to the limited field-effect characteristics of the fundamental silicon devices. Two-dimensional materials offer a promising platform, yet enhancing their functional versatility requires novel operational mechanisms. Here, we demonstrate a single WSe2/h-BN/graphene heterojunction capable of dynamically switching between distinct logic functions—XNOR and IMP (implication gate or “IF-THEN” gate)—simply by modulating the drain-source voltage. At a low bias of 0.3 V, the carrier distribution is governed by capacitive coupling, realizing an XNOR gate. Increasing the bias to 3 V activates Fowler–Nordheim tunneling between the graphene floating gate and the drain, enabling IMP logic operation. The interplay and voltage-induced transition between these two physical mechanisms underpin the device’s multifunctional capability. This work introduces a novel operational strategy for two-dimensional material-based reconfigurable logic, providing a pathway toward compact, adaptive hardware for post-CMOS computing.