One primary concern in diluted magnetic semiconductors (DMSs) is how to establish a long-range magnetic order with low magnetic doping concentration to maintain the gate tunability of the host semiconductor, as well as to increase Curie temperature. Several van der Waals semiconductors have been investigated recently to demonstrate the magnetic order in DMSs. Nonetheless, a comprehensive understanding of the operative mechanism has remained elusive. Here, we demonstrate concrete evidence of the long-range magnetic order through itinerant spin-polarized holes in a monolayer V-doped $\mathrm{W}{\mathrm{Se}}_2$ semiconductor. Hybridization between V impurity states and the host valence band has been investigated using scanning tunneling microscopy. Transport characteristics reveal the itinerant holes within the hybridized band and hysteresis in magnetoresistance; this clearly resembles the Zener-type description of the itinerant ferromagnetism as predicted by density functional theory calculations.

Tunable and low-power microcavities are essential for large-scale photonic integrated circuits. Thermal tuning, a convenient and stable tuning method, has been widely adopted in optical neural networks and quantum information processing. Recently, graphene thermal tuning has been demonstrated to be a power-efficient technique, as it does not require thick spacers to prevent light absorption. In this paper, a silicon-based on-chip Fano resonator with graphene nanoheaters is proposed and fabricated. This novel Fano structure is achieved by introducing a scattering block, and it can be easily fabricated in large quantities. Experimental results demonstrate that the resonator has the characteristics of a high quality factor (∼31,000) and low state-switching power (∼1 mW). The temporal responses of the microcavity exhibit qualified modulation speed with 9.8 μs rise time and 16.6 μs fall time. The thermal imaging and Raman spectroscopy of graphene at different biases were also measured to intuitively show that the tuning is derived from the joule heating effect of graphene. This work provides an alternative for future large-scale tunable and low-power-consumption optical networks, and has potential applications in optical filters and switches.

Reconfigurable logic is crucial for future adaptive computing, but is challenging to realize with conventional complementary metal-oxide-semiconductor technology due to the limited field-effect characteristics of the fundamental silicon devices. Two-dimensional materials offer a promising platform, yet enhancing their functional versatility requires novel operational mechanisms. Here, we demonstrate a single WSe₂/h-BN/graphene heterojunction capable of dynamically switching between distinct logic functions—XNOR and IMP (implication gate or “IF-THEN” gate)—simply by modulating the drain-source voltage. At a low bias of 0.3 V, the carrier distribution is governed by capacitive coupling, realizing an XNOR gate. Increasing the bias to 3 V activates Fowler–Nordheim tunneling between the graphene floating gate and the drain, enabling IMP logic operation. The interplay and voltage-induced transition between these two physical mechanisms underpin the device’s multifunctional capability. This work introduces a novel operational strategy for two-dimensional material-based reconfigurable logic, providing a pathway toward compact, adaptive hardware for post-CMOS computing.