Abdellaziz Doghmane

Prof. Dr. Abdellaziz Doghmane


Research Focus & Metrics

Academic Career Length

9Years (2018-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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22 March 2022 in Silicon
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Journal Article
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ITIbtissem Touati
Ibtissem Touati
ADAbdellaziz Doghmane
Abdellaziz Doghmane
AKAssia Khoualdia
Assia Khoualdia
ZHZahia HADJOUB
Zahia HADJOUB


1 December 2018 in Chinese Journal of Physics
Verified
Journal Article
Closed access
KAKahina Ammiali
Kahina Ammiali
ADAbdellaziz Doghmane
Abdellaziz Doghmane
FHFatiha Hadjoub
Fatiha Hadjoub
ZHZahia HADJOUB
Zahia HADJOUB

28 March 2026 in Coatings
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Journal Article
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HDHoussem Eddine Doghmane
Houssem Eddine Doghmane
ESElfahem Sakher
Elfahem Sakher
DNDjamila Nebti
Djamila Nebti
TITouati Ibtissem
Touati Ibtissem
DODjemâa Ben Othmane
Djemâa Ben Othmane
ADAbdellaziz Doghmane
Abdellaziz Doghmane
We investigated the effect of film thickness d on the acoustic response of titanium dioxide (TiO2) layers deposited on Ti, SiO2, Al2O3, and Si substrates. For each TiO2 thickness–substrate pair, we computed reflection coefficients and acoustic signatures under normal operating conditions of a conventional scanning acoustic microscope, then deduced the Rayleigh-wave velocity VR from spectral analysis of the oscillatory layer–substrate signatures. As d increased, VR either rose or fell, depending on the layer/substrate pair, and eventually approached a saturation value. For TiO2/SiO2 and TiO2/Ti, VR increased from those of the bare substrates (SiO2: 3415 m/s; Ti: 2965 m/s) toward 3830 m·s−1, the bulk TiO2 value. For TiO2/Al2O3 and TiO2/Si, VR decreased from the substrate values (Al2O3: 5700 m/s; Si: 4712 m/s) toward the same TiO2 saturation. These dispersion trends are consistent with stiffening (VR (TiO2) > VR (Substrate)) or loading (VR (TiO2) < VR (Substrate)) effects. The resulting VR–d dispersion charts provide theoretical reference trends relating thickness and Rayleigh-wave velocity for the idealized TiO2/substrate systems considered here.

11 August 2026 in Frontiers in Physics
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DODjemâa Ben Othmane
Djemâa Ben Othmane
HDHoussem Eddine Doghmane
Houssem Eddine Doghmane
ESElfahem Sakher
Elfahem Sakher
NDNozha El Ahlem Doghmane
Nozha El Ahlem Doghmane
Cristian Vacacela GomezCristian Vacacela Gomez
Cristian Vacacela Gomez
ADAbdellaziz Doghmane
Abdellaziz Doghmane
To improve the performance of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs), which are used in flat-panel displays and related electronic devices, we investigated the effect of reducing the Si 3 N 4 gate-insulator thickness ( d i ) on selected transistor parameters ( P ). Two-dimensional numerical simulations were performed using Atlas-Silvaco. As d i decreased from 300 to 15 nm, the a-Si:H TFTs showed sharper switching behavior, with the drain current increasing from an off-state current (I off ) of 1.4 × 10 −12 A to an on-state current ( I on ) of approximately 1.8 × 10 −5 A at low operating voltages. For d i = 15 nm, the extracted parameters were a threshold voltage ( V th ) of 3.06 V, field-effect mobility ( μ FE ) of approximately 0.037 cm 2 V −1 s -1 , subthreshold swing ( SS ) of 0.10 V dec −1 , gate capacitance per unit area ( C i ) of 44.25 × 10 −8 F cm -2 , and maximum electric field ( E max ) of 1.65 × 10 5 V cm -1 . As d i decreased, C i , I on , I on / I off , and E max increased, whereas V th , μ FE , I off , and SS decreased. These trends were quantified by curve fitting to obtain empirical P = f ( d i ) relations for each parameter. The fitted relations provide a practical basis for estimating the Si 3 N 4 gate-insulator thickness required to target specific electrical parameters in a-Si:H TFT design.