The paper presents the results of a study of the structural, optical and electrophysical characteristics of phthalocyanine films and its metal complexes with different thicknesses. Films of phthalocyanine and its metal complexes were obtained on the conductive surface of the FTO by thermal evaporation in vacuum. It is shown that the observed broadening of the B and Q bands and the hypsochromic shift of the maxima in the absorption spectra are associated with the central atom. With a decrease in the thickness of MPc films, there is a decrease in the value of the half-width of the absorption spectra. The effect of the thickness of phthalocyanine films on the efficiency of generation and transport of charge carriers in the FTO/MPc/Al cell was studied. It is shown that the VAC increases almost 2.5 times compared to a photocell based on a metal-free phthalocyanine. From the obtained impedance measurement data, it was found that the electrophysical parameters of phthalocyanines depend on the values of optical density, broadening of absorption bands in the short-wave and visible spectral regions, which is consistent with the data of the volt-ampere characteristic.

The influence of the annealing medium of thin films of nickel oxide (NiOx) on structural, optical and electrical transport properties is studied in this paper. NiOx films were synthesized by sol-gel method and annealed at a temperature of 300 °C in air, inert nitrogen (N2), oxygen (O2) gases and vacuum. The values of the films thickness were determined from the transverse cleavage of the SEM image. The films thickness depends on the annealing medium. Measurements of the EDX spectra of NiOx films were carried out. Analysis of the quantitative O/Ni ratio showed that the film annealed in an air atmosphere is close to the stoichiometric parameters of NiO. Measurements of the EDX spectra of NiOx films were carried out. According to the Raman spectra, an increase in peak intensities is observed indicating an increase in the density of defects in the film by Ni vacancies depending on the annealing medium. Absorption spectra and Tauc plots of NiOх films were obtained. The optical density of the films depends on the annealing conditions of the films. Data analysis shows that the band gap width depends on the annealing medium and varies from Eg = 3.12 eV to Eg = 3.45 eV. The analysis of the impedance spectra allowed us to estimate the values of the resistances R1 and R2. It is shown that an increase in the resistance of R1 is associated with a decrease in the density of defects in the NiOx film, decrease in the recombination resistance of R2, and an increase in recombination processes at the interface.