Screw dislocations are generally considered to be one of the main causes of GaN-based device leakage, but so far, nearly no reports have focused on the effects of open-core screw dislocations on device leakage currents experimentally. In this paper, we use a conductive atomic force microscope to characterize the electronic properties of threading dislocations (TDs) in the GaN layer. The full-core screw dislocations and mixed dislocations are found to provide conductive paths for device leakage currents. In terms of the contribution to device leakage currents, the edge and open-core screw dislocations have smaller effects than the full-core screw dislocations and mixed dislocations. We use isotropic linear elasticity theory and density functional theory calculations to model the core atomic structures of TDs and calculate the corresponding electronic structures. The results show that screw dislocations with full-core structures are found to introduce both deep and shallow energy states within the energy gap dispersedly, while the open-core screw dislocations and the most edge dislocations introduce only shallow energy states. The calculated electronic structures of each type of dislocation are systematically compared and correlated with experimental observations. Our findings demonstrate that full-core screw dislocations and mixed dislocations in the GaN layer have a far more detrimental impact on device leakage than edge and open-core screw dislocations.

The self-powered photoelectrochemical components themselves featured advancements in operating independently without external supply. Ultimately, due to lack of assistance from the external bias, the photoelectrochemical response is commonly restricted by the deficient photo-quantum efficiency for the absence of carrier multiplication. This work demonstrates a self-powered photoelectrochemical photodetector based on CuO_x/AlGaN nanowires with staggered band structure and enhanced built-in potential for efficient exciton extraction. The generated multiple excitons within reach-through CuO_x layer could be speedily separated before Auger recombination. This yields a 131.5% external quantum efficiency and 270.6 mA W⁻¹ responsivity at 255 nm. The work confirms the role of multiple exciton generation in photoelectrochemical systems, offering a solution on paving path of advance for self-powered optoelectronics and weak-light UV imaging applications.

The sensing properties of an α phase black phosphorus carbide (P ₂ C ₂ ) monolayer for the adsorption of various gases are theoretically investigated.

Normally off AlGaN/GaN high electron mobility transistors with a p-type gate are promising for power switching applications, with advantages of low energy consumption and safe operation. In this work, p-NiO is employed as a gate stack, and the interfacial reconstruction and band structure modification at the p-NiO/AlGaN interface have been demonstrated to manipulate channel transport of AlGaN/GaN high electron mobility transistors by post-annealing. In addition to achieving a positive threshold voltage of 0.6 V and a large saturation output current of 520 mA/mm, we found that the gate leakage and On/Off drain current ratio can be improved significantly by more than 10⁴ due to the p-NiO/AlGaN interfacial reconstruction. However, high annealing temperature also results in an increasing ON-resistance and a dramatically increased knee voltage (V_K), which can be attributed to the formation of an ultra-thin γ-Al₂O₃ layer and the substitution of O on N site as a shallow donor at the p-NiO/AlGaN interface confirmed by experimental analyses. Theoretical calculations indicate that such interface reconstruction facilitates an additional potential well at the p-NiO/AlGaN interface to which electrons are spilled out from a two-dimensional electron gas channel under high forward gate voltage, resulting in the increased V_K. Finally, an optimized annealing condition was confirmed that can eliminate this increased V_K phenomenon and simultaneously remain these significantly improved device performances. These findings provide deep understanding of the performance manipulation of AlGaN high electron mobility transistors, which is very important for engineering the p-NiO/AlGaN interface toward high-performance and stable devices.