A high power laser system was used to drive the ignition of inertial confinement fusion (ICF), of which the high energy, the uniform focal spot, the accurate laser waveform, and the synchronization between the laser beams are key parameters. To accomplish this, global laser characteristics control should be assured, which was the main purpose of the injection laser system. In this paper, the key technological progress involved in the improvement of the performance of the injection laser of SG-II is reported, including frequency domain control, time domain control, near-field spatial shaping, pre-amplifier technology, and the optical parametric chirped pulse amplification pump source.

High laser damage threshold optical switches and spatial light modulators are in urgent demand in high power laser fields. In this Letter, liquid crystal optical switches using Si-doped GaN and Mg-doped GaN as transparent electrodes are fabricated, and the influence of the conductive properties of GaN is analyzed. The transmission and absorption characteristics of GaN and its sapphire substrate are tested. The results show that the liquid crystal device based on gallium nitride can be expected to play an important role in the fields of visible and near-infrared laser regions with a high laser damage threshold of more than 1 J / c m 2 .

A high-energy, high-beam-quality, high-contrast picosecond optical parametric chirped-pulse amplification (ps-OPCPA) laser system was demonstrated. The pulse from a femtosecond oscillator was stretched to 4 ps, after which it was amplified from 140 pJ to 600 µJ by an 8 ps/6 mJ pump laser in two non-collinear OPCPA stages. The total gain was >10⁶, and the root mean square of the energy stability of the laser system was 1.6% in 10 h. The contrasts of the solid and fiber mode-locked femtosecond oscillator-seeded ps-OPCPA systems were compared, and a signal-to-noise ratio of >10¹¹ was achieved. Using this system, the contrast of the front end in high-power picosecond petawatt laser facility was improved by ∼40 dB to >10¹¹, beyond ∼200 ps ahead of the main pulse with an output level of 60 mJ.

An optically addressed liquid crystal modulator for wavefront control of 1053 nm laser beam is reported in this paper. Its working principle, control method and spatial phase modulation capability are mainly introduced. A new method of measuring the relationship between gray level and phase retardation is proposed. The rationality of the curve is further confirmed by designing special experiments. According to the curve, several spatial phase distributions have been realized by this home-made device. The results show that, not only the maximum phase retardation is larger than $2\unicode[STIX]{x03C0}$ for 1053 nm wavelength, but also the control accuracy is high. Compared with the liquid crystal on silicon type spatial light modulator, this kind of modulator has the advantages of generating smooth phase distribution and avoiding the black-matrix effect.

In this paper, we propose an effective method to compensate for the performance degradation of optically addressed spatial light modulators (OASLMs). The thermal deposition problem usually leads to the on-off ratio reduction of amplitude OASLM, so it is difficult to achieve better results in high-power laser systems. Through the analysis of the laser-induced temperature rise model and the liquid crystal layer voltage model, it is found that reducing the driving voltage of the liquid crystal light valve and increasing the driving current of the optical writing module can compensate for the decrease of on–off ratio caused by temperature rise. This is the result of effectively utilizing the photoconductive effect of Bi₁₂SiO₂₀ (BSO) crystal. The experimental results verify the feasibility of the proposed method and increase the laser withstand power of amplitude-only OASLM by about a factor of 2.5.