All-inorganic perovskite quantum dots (APQDs) have emerged as excellent materials which have been widely used in numerous micro-nano photoelectric devices. However, resistive random access memory (RRAM) devices based on APQDs are relatively scarce. In this work, RRAM based on CsPbBr₃ APQDs prepared by the solution processed method was fabricated at room temperature. The sandwich structure memory device shows high reproducibility, good data retention ability, and light assisted multilevel storage capability. The resistance ratio (ON/OFF) of the RRAM device between the high resistance state and the low resistance state reaches almost 10⁷. Additionally, the device exhibits high performances under low power consumption—low reading voltage (−0.3 V) and operation voltage (−2.4 V/1.55 V). It is suggested that the connection and rupture of conducting filaments, which are formed by Br vacancies under an electric field, are responsible for the resistive switching effect. Our work provides an opportunity to develop the next generation high-performance and stable nonvolatile memory devices.

A novel self-powered NIR and THz PTE PD based on a (MAPbI₃/PEDOT:PSS) composite with a rapid response time of 28 μs.

Photoelectric resistive random access memory (RRAM) is a promising optoelectronic technology that is being developed to overcome the Von Neumann bottleneck and improve the computing and access performance of current computer systems. In this work, an ultra-stable broadband photoelectric tunable RRAM device based on PbS quantum dots (QDs) and poly(methyl methacrylate) (PMMA) hybrid materials was demonstrated. The device exhibits a long retention capability (>10⁴ s), a high ON/OFF current ratio (10⁴), fast response time (170 ns), cycle-to-cycle consistency, impressive environmental stability (>90 days) and flexibility. Multilevel data storage can be achieved through the appropriate setting of a series of compliance currents. In addition, the SET voltage of the device shows a broadband tunability from the ultraviolet (405 nm) to the near infrared (1177 nm). Furthermore, conductive atomic force microscopy (CAFM) measurements confirm that the formation and rupture of Ag conducting filaments are responsible for the resistive switching behavior. This study paves the way toward the development of next-generation high-density data storage technology and broadband photoelectric memory and computer technologies.

Self-powered and flexible ultrabroadband photodetectors (PDs) are desirable in a wide range of applications. The current PDs based on the photothermoelectric (PTE) effect have realized broadband photodetection. However, most of them express low photoresponse and lack of flexibility. In this work, high-performance, self-powered, and flexible PTE PDs based on laser-scribed reduced graphene oxide ( LSG ) / CsPbBr 3 are developed. The comparison experiment with LSG PD and fundamental electric properties show that the LSG / CsPbBr 3 device exhibits enhanced ultrabroadband photodetection performance covering ultraviolet to terahertz range with high photoresponsivity of 100 mA/W for 405 nm and 10 mA/W for 118 μm at zero bias voltage, respectively. A response time of 18 ms and flexible experiment are also acquired at room temperature. Moreover, the PTE effect is fully discussed in the LSG / CsPbBr 3 device. This work demonstrates that LSG / CsPbBr 3 is a promising candidate for the construction of high-performance, flexible, and self-powered ultrabroadband PDs at room temperature.

Highly sensitive broadband photodetection is of critical importance for many applications. However, it is a great challenge to realize broadband photodetection by using a single device. Here we report photodetectors (PDs) based on three-dimensional (3D) graphene foam (GF) photodiodes with asymmetric electrodes, which show an ultra-broadband photoresponse from ultraviolet to microwave for wavelengths ranging from 10 2 to 10 6 nm . Moreover, the devices exhibit a high photoresponsivity of 10 3 A · W − 1 , short response time of 43 ms, and 3 dB bandwidth of 80 Hz. The high performance of the devices can be attributed to the photothermoelectric (PTE, also known as the Seebeck) effect in 3D GF photodiodes. The excellent optical, thermal, and electrical properties of 3D GFs offer a superior basis for the fabrication of PTE-based PDs. This work paves the way to realize ultra-broadband and high-sensitivity PDs operated at room temperature.