The nitro-aromatic explosives of NB, PNP and 2,4-DNP (40 mg L⁻¹) could be completely degraded by MoSe₂ 3D microspheres for 3.5 h, 1.5 h and 2.5 h, under visible light irradiation.

Thermal interface material (TIMs) pads/sheets with both high elasticity and low thermal resistance are indispensable components for thermal management. In this paper, we propose a facile strategy for the fabrication of highly thermal conductive liquid metal (LM) nano/micro-channels embedded in an elastomeric matrix (polydimethylsiloxane, PDMS). The isolated LM micro-droplets were reshaped and became thermally connected upon applying stress to form conductive LM nano-channels, while improving the thermal conductivity (κ) up to 8.3 W m⁻¹ K⁻¹, which is greater than that of most commercial thermal silicone pads (<6 W m⁻¹ K⁻¹). In addition, a series of experiments on a commercial smartphone were performed to evaluate the heat dissipation performance. The results proved that LM thermal pads could not only reduce the temperature of the CPU and the back cover, but could also save energy and enhance the battery running time by as much as 31%.

Liquid metals (LMs) offer extremely low thermal resistance, and have been studied as an emerging thermal interface material (TIM). In this work, we propose an improved form of LM/indium film/LM sandwich pad as an efficient TIM. The sandwich-like structure was designed to avoid liquid leakage and oxidation of LM, and additional micropillar arrays were fabricated on the surface, which benefitted the improved wetting of the substrate surface. A series of thermal tests revealed the anti-leakage characteristic and thermal stability of LM/indium film/LM, whose thermal resistance can also reach as low as 0.036 cm² K W⁻¹. Additionally, the heat dissipation test performed on a commercial smart phone demonstrated that a LM/In/LM pad not only reduced the temperature of the CPU and back cover but also enhanced the runtime of a battery by 25%

Large domains of monolayered transition-metal dichalcogenides (TMDCs) have emerged as exciting materials because of their potential to provide a platform for ultrathin circuits and optoelectronics systems. Herein, we report ambient pressure chemical vapor deposition (CVD) growth of large scale MoSe₂ film for terahertz (THz) applications. Arrays of 100 × 60 μm MoSe₂ rectangle layers were etched out and field effect transistors (FETs) were fabricated on these arrays. The device exhibits current on/off ratio of ∼10⁴. The THz photoresponse of the devices was studied and a THz responsivity of ∼38 mV W⁻¹ was demonstrated, suggesting that TMDCs can be promising materials for long wavelength optoelectronic applications.