A finite element method is used here to simulate the temperature field, the thermosolutal convection, the solute segregation, and the non-isothermal phase transformation during the growth of ZnTe crystal via the temperature gradient solution growth technique (TGSG) with an accelerated crucible rotation technique (ACRT). Three different trapezoid-wave ACRT sequences are proposed, and their effects are examined from the views of the constitutional supercooling and the mixing of the solution. The solution in front of the growth interface can be fully mixed only during the constant rotation stage of the ACRT when there is a clockwise Ekman flow. An inappropriate ACRT can produce excessively strong clockwise and counterclockwise Ekman flows, and this results in constitutional supercooling in front of the central part of the growth interface at the beginning of the stop stage and in front of the peripheral part at the end of the constant rotation stage. By adjusting the acceleration rate of the ampoule rotation, the appropriate Ekman flows can be obtained to well mix the solution and avoid the constitutional supercooling. An appropriate ACRT sequence is provided, which can facilitate the mixing of the solution, avoid constitutional supercooling, and improve the growth interface morphology.

The influence of ytterbium and indium on a co-doped CdZnTe (CZT:(In,Yb)) crystal grown using the vertical Bridgman method was investigated. A new energy level, mainly derived from [YB_Cd]⁺, was identified from the photoluminescence (PL) spectra. The trap density of Cd vacancies was obviously reduced along with an increased number of tellurium antisites according to thermally stimulated current (TSC) measurements. A variation in the intensity ratio for the A⁰X/D⁰X peak was observed in the PL spectra compared with an indium doped CdZnTe (CZT:In) crystal. Time-of-flight (TOF) results showed that the electron mobility was determined to be 1148 cm² Vs⁻¹, which is about 26% higher than that of CZT:In. The major cause was considered to be electrical compensation and the gettering process, where the concentrations of Cd vacancies and acceptor impurities were reduced, leading to an enhancement in the mobility.

The impurity from raw material in the as-grown crystal is one of the most important factors that hamper the advancement of Cd _0.9 Zn _0.1 Te detectors. However, the influence of impurity oxygen is rarely reported. In this study, first principle-calculation is carried out to give a prediction about transition levels of oxygen-related defects. Glow Discharge Mass Spectrometry (GDMS) is used to determine the concentration of all the elements. The quantitative analysis of oxygen related defects is carried out by I-DLTS (deep level transient spectrum), which can break through the limitations of traditional C-DLTS testing in the field of high resistance materials. The peaks observed at about 50K and 100K are related to the level of (V _Cd -O _Te ) ^0/- and (V _Cd -O _Te ) ^-/2- defect pair, with energy about Ev+0.079 eV and EV+0.173 eV, trap cross-section about 3.02×10 ^-19 and 1.01×10 ^-19 cm ² , respectively. The effect of oxygen on (μτ) _e of the Cd _0.9 Zn _0.1 Te semiconductors is evaluated through Alpha particle spectrum response testing by fitting the charge collection efficiency with applied bias voltages. The (μτ) _e is about 5.21×10 ^-4 cm ² /V in CZT with more oxygen and 2.33×10 ^-3 cm ² /V with less oxygen. The mobility is obtained from the results of Time of Flight (TOF) testing through the laser-beam-induced current (LBIC) technique, to be around 1000 cm ² /V·s ^-1 for both samples, and the lifetime to be 494 ns and 2407 ns respectively. It can be concluded that oxygen-related defects can terribly affect the electron transport properties.

The acoustic properties of three improved hydraulic mufflers with extended necks are investigated theoretically and experimentally. The effect of length and slope of the conical tube, and the perforations on the extended tube is studied on the resonance frequency and the insertion loss. The plane wave approach is used for the constant and the variable area tubes, while Sullivan and Peat's method is applied for the perforation tube unit. Theoretical predictions are compared with experiments for these three different hydraulic noise suppressors, which are fabricated. It is shown that the resonance frequency and the insertion loss characteristics may be controlled by the length and the slope of the conical tube and perforation porosity of the extended tube without changing the expansion chamber volume. Finally, the effect of the cross-sectional shape of the expansion chamber is investigated.

The acceleration sensor with high g value is widely used in a variety of fields, including collision impact, aerospace, and defense security and thus is a key focus in the future. The sensor with a double-ended four-beam structure is investigated in this paper via finite element simulation analysis. The measurement sensitivity of the sensor can be improved by changing the position of the cantilever beam. Furthermore, transverse interference in the X-direction and Y-direction can be eliminated in theory through the layout of piezoresistors and the Wheatstone circuit. The simulation results show that the sensor's sensitivity is 2.6μV/g while its cross-sensitivity in the X-direction and Y-direction is 0%, indicating that the sensor's performance has been substantially improved.

The preparation of high-performance cadmium zinc telluride (CZT) radiation detector materials requires efficient ingot-level quality assessment before full downstream wafer testing. This study proposes a machine learning framework that predicts the product-level yield of test wafers from IV and double-sided spectral measurements of a limited number of standardized evaluation wafers from the same ingot. To address the small number of ingots and wafer-level variability, ingot-level aggregate, A/B-side consistency, threshold-ratio, and distributional features were combined with intra-ingot bootstrap augmentation. Among the evaluated regression models, Random Forest achieved the best held-out test performance under a leakage-safe protocol, with an MSE of 0.021, an MAE of 0.125, and a Pearson correlation coefficient of 0.646; XGBoost showed comparable performance, with an MSE of 0.023, an MAE of 0.128, and a Pearson correlation coefficient of 0.601. In a top-22% screening experiment, the average true yield of ingots selected by Random Forest and XGBoost reached 63.71% and 60.40%, respectively, exceeding the empirical Rule_IV_Abs baseline of 59.08%. These results indicate that the proposed framework can provide useful ranking and prioritization support for early CZT ingot screening, while remaining a decision-support tool rather than a replacement for wafer-level inspection.