The growing demand for intelligent environmental monitoring is driving the advancement of high-performance, low-cost, and highly integrated gas sensors. Silicon-compatible semiconductor gas sensors provide a promising platform to achieve this goal by leveraging their compatibility with complementary metal–oxide semiconductor (CMOS) processes. The established mass-manufacturing capabilities of micro-electromechanical systems (MEMS) and the high sensitivity and signal amplification characteristics of field effect transistors (FETs) in recent years have made the development of next-generation sensing devices feasible. In this review, we systematically summarize the latest advances in silicon-compatible gas sensors, with a focus on MEMS and FET technologies. We discuss their sensing mechanisms and performance optimization strategies, and further highlight the evolution of gas sensor technology toward on-chip intelligent olfactory systems that integrate sensing, computing, and storage capabilities.
Colloidal quantum dots (CQDs) are ideal for room-temperature gas sensors due to their high surface area, abundant dangling bonds, and excellent film-forming properties. However, the underlying conduction mechanism remains unclear, lacking in-depth analysis of gas–solid charge transfer and carrier transport, which hinders the rational design of high-performance gas sensors. To address this, we fabricated a PbS colloidal quantum dot thin-film transistor (TFT) gas sensor that enables in situ analysis of carrier concentration and mobility via gate voltage modulation. We systematically measured the variations in conductivity, carrier concentration, and mobility with NO2 concentration and established a normalized weight variation model. The results show that the conductivity increase upon NO2 exposure is primarily due to the rise in carrier concentration induced by gas adsorption. At low concentrations (below 0.5 ppm), the response is dominated by mobility variation. This work provides a physically meaningful theoretical framework for understanding the conduction mechanism.