The measurement of humidity is of great significance for precision instruments, semiconductor integrated circuits, and element manufacturing factories. The oxygen-containing groups and noble metals in graphene-based sensing materials can significantly influence their humidity-sensing performance. Herein, 1,3,5-benzenetricarboxylic acid-functionalized reduced graphene oxide (H3BTC-rGO) loaded with Ag nanocluster nanocomposites (H3BTC-rGO/Ag) was synthesized via a facile one-step reduction method. The H3BTC-rGO/Ag-based sensor exhibited excellent humidity-sensing performance, including a higher sensitivity of 88.9% and a faster response/recovery time of 9 s/16 s towards 50% RH than those of other GO-, rGO-, and H3BTC-rGO-based sensors. The proposed humidity sensor was tested in the range of 0% to 100% RH and showed excellent sensitivity even at a low relative humidity of 0–10% or a high relative humidity of 90–100%. In addition, the H3BTC-rGO/Ag-based sensor had excellent selectivity, reliable repeatability, and good stability over 30 days under different relative humidities. Compared with H3BTC-rGO-200, the H3BTC-rGO/Ag-0.25-based sensor exhibited a low hysteresis of less than ±5% RH. The high performance was ascribed to the high density of the carboxyl groups and good conductivity of H3BTC-rGO, as well as the catalytic role of the Ag nanoclusters, resulting in high water adsorption rates. The potential applications of the H3BTC-rGO/Ag-based humidity sensor in human exhalation monitoring are also discussed. This work provides a reference for the application of graphene-based flexible sensors in monitoring very wet and dry environments.

In this work, (NaBi)_0.5−x(LiSm)_xBi₂Nb₂O₉ (NBN-xLS, x = 0.00–0.06) ceramics were fabricated by co-doping of LiSm into Na_0.5Bi_2.5Nb₂O₉. The traditional solid-phase technique was employed for the entire synthesis process. The impact of LiSm doping on the crystal structure, dielectric, ferroelectric, and piezoelectric properties, as well as the underlying conduction mechanisms in the NBN-xLS ceramics, was analyzed systematically. The XRD patterns and the Rietveld refinement revealed that lattice distortion reduced with an increase in the LiSm doping amount. The decrease in lattice distortion significantly contributed to its improved ferroelectric and piezoelectric characteristics. The results showed that the NBN-xLS ceramics were primarily p-type materials due to their bulk-limited conduction, with oxygen holes and vacancies acting as the conducting species, and the appearance of weak ion conduction at high temperatures. The NBN-0.04LS ceramic, in particular, displayed the highest performance, with P_r, T_c, and d₃₃ values of 9.05 μC/cm², 777 °C, and 25.2 pC/N, respectively. Additionally, the ceramic displayed remarkable thermal stability, with its d₃₃ retaining 95.0% of its original value after annealing at 760 °C. These results demonstrate that LiSm co-doped Na_0.5Bi_2.5Nb₂O₉ ceramics have potential for use in high-temperature sensors.

The growing demand for intelligent environmental monitoring is driving the advancement of high-performance, low-cost, and highly integrated gas sensors. Silicon-compatible semiconductor gas sensors provide a promising platform to achieve this goal by leveraging their compatibility with complementary metal–oxide semiconductor (CMOS) processes. The established mass-manufacturing capabilities of micro-electromechanical systems (MEMS) and the high sensitivity and signal amplification characteristics of field effect transistors (FETs) in recent years have made the development of next-generation sensing devices feasible. In this review, we systematically summarize the latest advances in silicon-compatible gas sensors, with a focus on MEMS and FET technologies. We discuss their sensing mechanisms and performance optimization strategies, and further highlight the evolution of gas sensor technology toward on-chip intelligent olfactory systems that integrate sensing, computing, and storage capabilities.

Colloidal quantum dots (CQDs) are ideal for room-temperature gas sensors due to their high surface area, abundant dangling bonds, and excellent film-forming properties. However, the underlying conduction mechanism remains unclear, lacking in-depth analysis of gas–solid charge transfer and carrier transport, which hinders the rational design of high-performance gas sensors. To address this, we fabricated a PbS colloidal quantum dot thin-film transistor (TFT) gas sensor that enables in situ analysis of carrier concentration and mobility via gate voltage modulation. We systematically measured the variations in conductivity, carrier concentration, and mobility with NO₂ concentration and established a normalized weight variation model. The results show that the conductivity increase upon NO₂ exposure is primarily due to the rise in carrier concentration induced by gas adsorption. At low concentrations (below 0.5 ppm), the response is dominated by mobility variation. This work provides a physically meaningful theoretical framework for understanding the conduction mechanism.