A multi-band analogue electromagnetically induced transparency (A-EIT) metamaterial is proposed. The structure is composed of liquid crystal (LC) layer and a graphene strips layer on both sides of silicon dioxide. The transmission spectrum and electric field distribution of only one graphene strip and two graphene strips have been studied. As a bright mode, the graphene strip is coupled with adjacent graphene strip to realize the A-EIT effect. When multiple graphene strips are coupled with each other, the multi-band A-EIT is obtained due to the electric dipole resonances of the four strips. The results show that the multiband A-EIT effect can be tuned by voltage on LC and graphene layer, respectively. Moreover, changing the incident angle of the electromagnetic wave has had little influence on the transmission window in the low frequency band, it is meaning that the A-EIT effect with insensitive to the incident angle can be obtained. Each transmission window has a high maximum transmittance and figure of merit (FOM). The multi-band A-EIT effect can widen the application on sensor and optical storage devices.

Metamaterials are highly demanded for advanced applications in absorbers, sensors, and filters. However, metamaterial reflectors, especially broadband reflectors, remain challenging. In this paper, we theoretically investigate a wideband metamaterial reflector which consists of cross shaped graphene strips and a silica (SiO₂) substrate. The cross shaped graphene strips are coated on the top of the structure, and the cross shape rotated 45° graphene strips are spun on the bottom of it. The calculated reflection can be tuned through length and width of the graphene strips. By comparison, not only broadband reflection but also analogue electromagnetically induced reflection (EIR) can be realized. Moreover, the structure can generate a bi-directional broadband reflection of insensitive polarization. This kind of bi-directional reflector at microwave frequencies is obtained because the top and bottom graphene strip structures are similar. We employ the electric field distribution of the designed structure to elucidate the mechanism of the analogue EIR effect. We further discuss the influence of incident angle on the analogue EIR effect. Such a bi-directional reflector can be potentially applied to a wideband reflector, antenna, and sensor.

In this work, we present the design and analysis of a dual-layered metamaterial structure exhibiting multi-band, polarization-insensitive electromagnetically induced transparency (EIT)-like effects. Through a combination of full wave simulations and multipole scattering theory, the underlying physical mechanism is identified as the coherent coupling between bright (dipolar) and quasi-bright (higher order harmonics) eigenmodes, facilitated by the generation and interference of higher order harmonics. A comprehensive parametric study elucidates the correlation between geometric dimensions and the spectral positions and quality factors of the resulting EIT-like windows. Experimental verification conducted in a microwave anechoic chamber confirms the simulated transmission spectra demonstrating agreement. Furthermore, the structure’s performance as a refractive index sensor is quantitatively assessed, revealing sensitivity and figure of merit. These findings demonstrated the potential of the proposed metamaterial for advanced applications in multi-frequency filtering and integrated photonic sensing.

In this paper, a three-layer metamaterial is designed in the microwave band. The transmission of the metamaterial is analyzed by the finite-integration time-domain method, and the dual-band analogous electromagnetically induced transparency (EIT) effect is obtained. Due to the rotational symmetry of the top and bottom layers of the structure, it is orthogonal polarization insensitive and has a bidirectional EIT effect. The physical mechanism of the dual-band EIT generated by the structure is further analyzed using the electric field distribution and multilevel scattering theory. The group delay and group exponent of the structure were calculated. The results show that the group exponent of the structure can reach 1000, so the structure has potential applications in microwave communication and multi-frequency filtering.

This paper addresses the trade-off between electromagnetic interference (EMI) and common-mode transient immunity (CMTI) performance in capacitively isolated gate drivers for high-frequency silicon carbide (SiC) applications. Starting from the fundamental architecture of on-off keying (OOK) modulation, a novel transmitter (TX) modulator architecture is proposed. The proposed architecture employs a dynamic high-frequency carrier regulation circuit to suppress electromagnetic interference caused by the fixed carrier at the spectral source, while simultaneously utilizing a dynamic substrate regulation circuit to mitigate the impact of common-mode transient interference on the TX side, thereby enhancing the overall CMTI performance. The chip is fabricated in a 0.18-μm BCD process. Simulated carrier spectrum peak attenuation across different process-temperature corners demonstrates that the attenuation ranges from 4.43 dB to 19.621 dB across the fundamental through the third harmonic components. Under the same typical process-temperature corner, the simulated CMTI reaches 220 V/ns, which fully validates the effectiveness of the proposed architecture in both spectral peak reduction for EMI suppression and CMTI enhancement. Post-fabrication chip testing primarily focuses on output performance, with both the simulated carrier spectrum results for EMI and the CMTI being simulation-verified indicators. The measured output voltage range is 15–24 V; at a supply voltage of 15 V, the charging and discharging currents are 5 A and 4.5 A, respectively, and at 24 V, they are 5.7 A and 5.3 A, respectively.