Magnonics is a budding research field in nanomagnetism and nanoscience that addresses the use of spin waves (magnons) to transmit, store, and process information. The rapid advancements of this field during last one decade in terms of upsurge in research papers, review articles, citations, proposals of devices as well as introduction of new sub-topics prompted us to present the first roadmap on magnonics. This is a collection of 22 sections written by leading experts in this field who review and discuss the current status besides presenting their vision of future perspectives. Today, the principal challenges in applied magnonics are the excitation of sub-100 nm wavelength magnons, their manipulation on the nanoscale and the creation of sub-micrometre devices using low-Gilbert damping magnetic materials and its interconnections to standard electronics. To this end, magnonics offers lower energy consumption, easier integrability and compatibility with CMOS structure, reprogrammability, shorter wavelength, smaller device features, anisotropic properties, negative group velocity, non-reciprocity and efficient tunability by various external stimuli to name a few. Hence, despite being a young research field, magnonics has come a long way since its early inception. This roadmap asserts a milestone for future emerging research directions in magnonics, and hopefully, it will inspire a series of exciting new articles on the same topic in the coming years.

Magnonics addresses the physical properties of spin waves and utilizes them for data processing. Scalability down to atomic dimensions, operation in the GHz-to-THz frequency range, utilization of nonlinear and nonreciprocal phenomena, and compatibility with CMOS are just a few of many advantages offered by magnons. Although magnonics is still primarily positioned in the academic domain, the scientific and technological challenges of the field are being extensively investigated, and many proof-of-concept prototypes have already been realized in laboratories. This roadmap is a product of the collective work of many authors, which covers versatile spin-wave computing approaches, conceptual building blocks, and underlying physical phenomena. In particular, the roadmap discusses the computation operations with the Boolean digital data, unconventional approaches, such as neuromorphic computing, and the progress toward magnon-based quantum computing. This article is organized as a collection of sub-sections grouped into seven large thematic sections. Each sub-section is prepared by one or a group of authors and concludes with a brief description of current challenges and the outlook of further development for each research direction.

The ferroelectric properties and crystal structure of doped HfO₂ thin films were investigated for different thicknesses, electrode materials, and annealing conditions. Metal-ferroelectric-metal capacitors containing Gd:HfO₂ showed no reduction of the polarization within the studied thickness range, in contrast to hafnia films with other dopants. A qualitative model describing the influence of basic process parameters on the crystal structure of HfO₂ was proposed. The influence of different structural parameters on the field cycling behavior was examined. This revealed the wake-up effect in doped HfO₂ to be dominated by interface induced effects, rather than a field induced phase transition. TaN electrodes were shown to considerably enhance the stabilization of the ferroelectric phase in HfO₂ compared to TiN electrodes, yielding a P_r of up to 35 μC/cm². This effect was attributed to the interface oxidation of the electrodes during annealing, resulting in a different density of oxygen vacancies in the Gd:HfO₂ films. Ab initio simulations confirmed the influence of oxygen vacancies on the phase stability of ferroelectric HfO₂.

This paper provides a tutorial overview over recent vigorous efforts to develop computing systems based on spin waves instead of charges and voltages. Spin-wave computing can be considered a subfield of spintronics, which uses magnetic excitations for computation and memory applications. The Tutorial combines backgrounds in spin-wave and device physics as well as circuit engineering to create synergies between the physics and electrical engineering communities to advance the field toward practical spin-wave circuits. After an introduction to magnetic interactions and spin-wave physics, the basic aspects of spin-wave computing and individual spin-wave devices are reviewed. The focus is on spin-wave majority gates as they are the most prominently pursued device concept. Subsequently, we discuss the current status and the challenges to combine spin-wave gates and obtain circuits and ultimately computing systems, considering essential aspects such as gate interconnection, logic level restoration, input–output consistency, and fan-out achievement. We argue that spin-wave circuits need to be embedded in conventional complementary metal–oxide–semiconductor (CMOS) circuits to obtain complete functional hybrid computing systems. The state of the art of benchmarking such hybrid spin-wave–CMOS systems is reviewed, and the current challenges to realize such systems are discussed. The benchmark indicates that hybrid spin-wave–CMOS systems promise ultralow-power operation and may ultimately outperform conventional CMOS circuits in terms of the power-delay-area product. Current challenges to achieve this goal include low-power signal restoration in spin-wave circuits as well as efficient spin-wave transducers.