Rapid progress in two-dimensional (2D) crystalline materials has recently enabled a range of device possibilities. These possibilities may be further expanded through the development of advanced 2D glass materials. Zachariasen carbon monolayer, a novel amorphous 2D carbon allotrope, was successfully synthesized on germanium surface. The one-atom-thick continuous amorphous layer, in which the in-plane carbon network was fully sp²-hybridized, was achieved at high temperatures (>900°C) and a controlled growth rate. We verified that the charge carriers within the Zachariasen carbon monolayer are strongly localized to display Anderson insulating behavior and a large negative magnetoresistance. This new 2D glass also exhibited a unique ability as an atom-thick interface layer, allowing the deposition of an atomically flat dielectric film. It can be adopted in conventional semiconductor and display processing or used in the fabrication of flexible devices consisting of thin inorganic layers.

A comparison is made between the electronic structures determined in ultrahigh vacuum of three surfaces using scanning tunneling spectroscopy (STS) and Kelvin probe force microscopy (KPFM). STS and KPFM illustrates Fermi level pinning of clean InAs(001)-(4×2) and InGaAs(001)-(4×2) surfaces and near flat band conditions for InAs(110) cleaved surfaces. However, for InAs(001)-(4×2) and InGaAs(001)-(4×2), STS and KPFM data show very different positions for the surface Fermi level on identical samples; it is hypothesized that the difference is due to the Fermi level measured by KPFM being shifted by a static charge dipole to which STS is much less sensitive.

The design of novel exciplex-forming co-host materials provides new opportunities to achieve high device performance of organic light emitting diodes (OLEDs), including high efficiency, low driving voltage and low efficiency roll-off. Here, we report a comprehensive study of exciplex-forming co-host system in OLEDs including the change of co-host materials, mixing composition of exciplex in the device to improve the performance. We investigate various exciplex systems using 5-(3–4,6-diphenyl-1,3,5-triazin-2-yl)phenyl-3,9-diphenyl-9H-carbazole, 5-(3–4,6-diphenyl-1,3,5-triazin-2-yl)phenyl)-9-phenyl-9H-3,9′-bicarbazole, and 2-(3-(6,9-diphenyl-9H-carbazol-4-yl)phenyl)-4-phenylbenzo[4,5]thieno[3,2-d]pyrimidine, as electron transporting (ET: electron acceptor) hosts and 9,9′-dipenyl-9H, 9′H-3,3′-bicarbazole and 9-([1,1′-biphenyl]-4-yl)-9′-phenyl-9H,9′H-3,3′-bicarbazole as hole transporting (HT: electron donor) hosts. As a result, a very high current efficiency of 105.1 cd/A at 10³ cd/m² and an extremely long device lifetime of 739 hrs (t₉₅: time after 5% decrease of luminance) are achieved which is one of the best performance in OLEDs. Systematic approach, controlling mixing ratio of HT to ET host materials is suggested to select the component of two host system using energy band matching and charge balance optimization method. Furthermore, our analysis on exciton stability also reveal that lifetime of OLEDs have close relationship with two parameters; singlet energy level difference of HT and ET host and difference of singlet and triplet energy level in exciplex.