We report on the successful synthesis of a p-type, substitutional doping at S-site, MoS₂ thin film using Phosphorous (P) as the dopant. MoS₂ thin films were directly sulfurized for molybdenum films by chemical vapor deposition technique. Undoped MoS₂ film showed n-type behavior and P doped samples showed p-type behavior by Hall-effect measurements in a van der Pauw (vdP) configuration of 10×10 mm² area samples and showed ohmic behavior between the silver paste contacts. The donor and the acceptor concentration were detected to be ∼2.6×10¹⁵ cm^-3 and ∼1.0×10¹⁹ cm^-3, respectively. Hall-effect mobility was 61.7 cm²V^-1s^-1 for undoped and varied in the range of 15.5 ∼ 0.5 cm²V^-1s^-1 with P supply rate. However, the performance of field-effect transistors (FETs) declined by double Schottky barrier contacts where the region between Ni electrodes on the source/drain contact and the MoS₂ back-gate cannot be depleted and behaves as a 3D material when used in transistor geometry, resulting in poor on/off ratio. Nevertheless, the FETs exhibit hole transport and the field-effect mobility showed values as high as the Hall-effect mobility, 76 cm²V^-1s^-1 in undoped MoS₂ with p-type behavior and 43 cm²V^-1s^-1 for MoS₂:P. Our findings provide important insights into the doping constraints for transition metal dichalcogenides.

Zn _0.80 Cd _0.20 O/Zn _0.92 Cd _0.08 O multiple quantum-well (MQW) light-emitting diodes (LEDs) on p -type 4H-SiC substrates, using remote-plasma-enhanced metal-organic chemical vapor deposition, have been fabricated and characterized. Band-edge green electroluminescence (EL) at 500 nm has been obtained. The ZnCdO MQW LEDs show a rectifying current-voltage behavior with a turn-on voltage of 6.0 V. The integrated EL intensity linearly increases with increasing injection current density up to 1.9 A/cm ² . Furthermore, the presence of an EL blue-shift of 20 nm with increasing current and a large EL spectral width in comparison to PL are discussed in terms of Cd compositional fluctuations.

We develop a disposable and cost-effective non-enzymatic glucose sensor consisting of an extended gate field effect transistor (EG-FET) to obtain effortless operation. The sensor is fabricated by printing, gold (Au) precursor ink and copper oxide nanoparticles (CuO NPs) inks using a commercial inkjet printer on a flexible Polyimide (PI) substrate. First, sensing properties are tested electrochemically. The sensor shows a sensitivity of 728.5 μA cm⁻² mM⁻¹ and a detection limit of 0.01 mM with a correlation coefficient (R) of 0.998. The observed linear dynamic range is from 0.5 to 7 mM. After that, the sensing electrode is adapted to the EG-FET. Two linear response ranges extend from 0.1 to 4 mM of a low concentration range of glucose with a sensitivity of 1295 μA cm⁻² mM⁻¹, and from 5 to 30 mM of a high concentration range of glucose with a sensitivity of 164 μA cm⁻² mM⁻¹ are observed. The EG-FET approach can enhance the detection sensitivities using amplification for a low concentration glucose range and extending a detection range for high concentration glucose. The presented work demonstrates that simply printed CuO NPs sensors can be used at low cost for disposable wide-range glucose detection devices. Article Highlights: A non-enzymatic printed glucose sensor using an inkjet printer has been successfully developed. CuO nanoparticles ink is printed on thin gold electrodes on Polyimide film. We evaluate the glucose detection of extended-gate field-effect transistor (EG-FET) sensors. The sensitivity is estimated to be 1295 μA cm⁻² mM⁻¹. The EG-FET structure has the merit of a simple operation and cost-effective personal health care devices.

We introduce metal complexes used to synthesize metal-oxide phosphor. Eu: BaMgAl₁₀O₁₇ powder was obtained by thermal decomposition of a mixture of xEu, (1-x)Ba, Mg and 10Al-EDTA complexes formed by a spray-dryer with metal-EDTA solution at the decomposition temperatures of >600°C. Blue emission was confirmed from the Eu: BaMgAl₁₀O₁₇ powder fired at 1400°C in reduction atmosphere under the flow of 4%H₂+96%Ar gas mixture.