This study aims to investigate the thermomechanical properties of vanadium dioxide (VO₂) thin films. A VO₂ thin film was simultaneously deposited on B270 and H-K9L glass substrates by electron-beam evaporation with ion-assisted deposition. Based on optical interferometric methods, the thermal–mechanical behavior of and thermal stresses in VO₂ films can be determined. An improved Twyman–Green interferometer was used to measure the temperature-dependent residual stress variations of VO₂ thin films at different temperatures. This study found that the substrate has a great impact on thermal stress, which is mainly caused by the mismatch in the coefficient of thermal expansion (CTE) of the film and the substrate. By using the dual-substrate method, thermal stresses in VO₂ thin films from room temperature to 120 °C can be evaluated. The thermal expansion coefficient is 3.21 × 10⁻⁵ °C⁻¹, and the biaxial modulus is 517 GPa.

The undoped and tungsten (W)-doped vanadium dioxide (VO₂) thin films were prepared by electron beam evaporation associated with ion-beam-assisted deposition (IAD). The influence of different W-doped contents (3–5%) on the electrical, optical, structural, and thermo-mechanical properties of VO₂ thin films was investigated experimentally. Spectral transmittance results showed that with the increase in W-doped contents, the transmittance in the visible light range (400–750 nm) decreases from 60.2% to 53.9%, and the transmittance in the infrared wavelength range (2.5 μm to 5.5 μm) drops from 55.8% to 15.4%. As the W-doped content increases, the residual stress in the VO₂ thin film decreases from −0.276 GPa to −0.238 GPa, but the surface roughness increases. For temperature-dependent spectroscopic measurements, heating the VO₂ thin films from 30 °C to 100 °C showed the most significant change in transmittance for the 5% W-doped VO₂ thin film. When the heating temperature exceeds 55 °C, the optical transmittance drops significantly, and the visible light transmittance drops by about 11%. Finally, X-ray diffraction (XRD) and scanning electron microscope (SEM) were used to evaluate the microstructure characteristics of VO₂ thin films.

This study employed atomic layer deposition (ALD) to fabricate an Al₂O₃ passivation layer to optimize the performance of ultraviolet (UV) photodetectors with a TiO₂-nanorod-(NR)-containing active layer and a solid–liquid heterojunction (SLHJ). To reduce the processing time and enhance light absorption, a hydrothermal method was used to grow a relatively thick TiO₂-NR-containng working electrode. Subsequently, a 5-nm-thick Al₂O₃ passivation layer was deposited on the TiO₂ NRs through ALD, which has excellent step coverage, to reduce the surface defects in the TiO₂ NRs and improve the carrier transport efficiency. X-ray photoelectron spectroscopy revealed that the aforementioned layer reduced the defects in the TiO₂ NRs. Moreover, high-resolution transmission electron microscopy indicated that following the annealing treatment, Al, Ti, and O atoms diffused across the interface between the Al₂O₃ passivation layer and TiO₂ NRs, resulting in the binding of these atoms to form Al–Ti–O bonds. This process effectively filled the oxygen vacancies in TiO₂. Examination of the photodetector device revealed that the photocurrent-to-dark current ratio exhibited a difference of four orders of magnitude (10⁻⁴ to 10⁻⁸ A), with the switch-on and switch-off times being 0.46 and 3.84 s, respectively. These results indicate that the Al₂O₃ passivation layer deposited through ALD can enhance the photodetection performance of SLHJ UV photodetectors with a TiO₂ active layer.

This study demonstrates the low-temperature (<100 °C) process for growing a thin silica buffer layer and aluminum oxide by atomic layer deposition (ALD) in the same reaction chamber. Heterogeneous multilayer thin films are prepared by a dual-mode equipment based on atomic layer deposition and plasma-enhanced chemical vapor deposition (PECVD) techniques. The pulse discrete feeding method (DFM) was used to divide the precursor purging steps into smaller intervals and generate discrete feeds, which improved the saturated distribution of gas precursors, film density and deposition selectivity. The experimental results show that the process method produces a uniform microstructure and that the best film uniformity is ±2.3% and growth rate is 0.69 Å/cycle. The thickness of aluminum oxide film has a linear relationship with the cyclic growth number from 360 to 1800 cycles. Meanwhile, the structural and mechanical stress properties of aluminum oxide thin films were also verified to meet the requirements of advanced thin-film devices.

This study presents the optimal process parameters of zirconium nitride (ZrN) thin films prepared by ion-assisted deposition (IAD) technology combined with electron-beam evaporation based on plasma surface treatment and the Taguchi method. We use Minitab statistical software (Version 20.2.0) and L9 orthogonal array parameter design combined with the response surface method (RSM). The quadratic polynomial regression equation was optimized by the RSM. Based on the control factor screening test of the Taguchi method, we determined the most critical factor combination for the process and derived the optimized process parameters of the ZrN thin films. In the coating experiments, we successfully achieved the optimal combination of good refractive index, adequate residual stress, and lower surface roughness on B270 glass substrates. These results indicate that the optimized preparation process can simultaneously achieve several desirable properties, improving the performance and application of ZrN thin films. Furthermore, our research method not only reduces the number of experiments and costs but also improves the efficiency of research and development. By screening key factors and optimizing process parameters, we can find the best process parameter more rapidly, reduce the demand for expenses given materials and equipment costs, and contribute to improving the electron-beam evaporation process. According to the experimental results, it can be observed that under certain conditions, the properties of ZrN thin films reached optimal values. These results are highly useful for optimizing the process parameters of ZrN thin films and provide a basis for further improvement of the thin film properties.

The undoped and tungsten (W)-doped vanadium dioxide (VO₂) thin films were prepared by electron beam evaporation associated with ion-beam assisted deposition (IAD). The influence of different W-doped contents (3%-5%) on the optical, electrical, structural, and thermos-mechanical properties of VO₂ thin films was investigated experimentally. Spectral transmittance results showed that with the increase of W-doped contents, the transmittance in the visible light range (400-750 nm) decreases from 60.2% to 53.9%, and the transmittance in the infrared wavelength range (2.5 μm to 5.5 μm) drops from 55.8% to 15.4%. As the W-doped content increases, the residual stress in the VO₂ thin film decreases from -0.276 GPa to -0.238 GPa, but the surface roughness increases. For temperature-dependent spectroscopic measurements, heating the VO2 thin films from 30°C to 100°C showed the most significant change in transmittance for the 5% W-doped VO₂ thin film. When the heating temperature exceeds 55°C, the optical transmittance drops significantly, and the visible light transmittance drops by about 11%. Finally, X-ray Diffraction (XRD) and scanning electron microscope (SEM) were used to evaluate the microstructure characteristics of VO₂ thin films.