High spin states of 112In were investigated using the reaction 110Pd(7Li,5n)112In at a beam energy of 50 MeV. A new level sequence has been found in this nucleus and the configuration $\pi${}g9/2$-${}2g7/2$\bigotimes${}$\nu${}h11/2 before the alignment and the configuation $\pi${}g9/2$-${}2g7/2$\bigotimes${}$\nu${}h11/23 after the alignment are assigned. The self-consistent titled axis cranking relativistic mean-field model calculations are performed to interpret the rotational structure and the characteristic features of antimagnetic rotation have been presented for the band after backbend.

Wide-bandgap semiconductors are more advantageous for betavoltaic batteries due to their high conversion efficiency and strong radiation resistance. However, there has been little comprehensive analysis of how wide-bandgap semiconductors lead to efficiency improvements. In this work, we proposed a simulation model to predict the output performance of betavoltaic batteries based on 4H-SiC, hexagonal-GaN, and diamond, in which the Monte Carlo code and COMSOL Multiphysics software were combined. The energy deposition of a ${}^{63}\text{Ni}$ source in semiconductors and the electrical characteristics of p–n junctions were investigated and compared. Our simulation results showed that the mass density and atomic number of semiconductor materials will cause the difference in energy deposition distribution, further leading to the different electron–hole pair generation rates. Then, the internal efficiency of batteries is co-determined by the energy band structure, depletion region width, built-in potential barrier, and minority carrier lifetime. The batteries based on wide-bandgap semiconductors can achieve the larger open-circuit voltage, further leading to higher efficiency. Additionally, to optimize the energy converter structure, the output parameters were calculated with a variation of doping concentrations and thicknesses of each region. Under the irradiation of a ${}^{63}\text{Ni}$ source, the diamond-based battery with a p–n junction structure has the highest internal efficiency of 31.3%, while the GaN-based battery has the lowest one (16.8%), which can be attributed to the larger carrier recombination rate.

Based on recent experimental data, the band structure of the odd-odd nucleus ${}^{86}$Y has been studied. The positive-parity yrast band built on the configuration $$\pi${}{g}_{9/2}$\bigotimes${}$\nu${}{g}_{9/2}^{$-${}1}$ shows a large signature splitting, and a signature inversion occurs at $I$\sim${}13$\hbar${}$. The signature inversion is interpreted by the competition between single-particle and collective excitations in this nucleus. The negative-parity dipole band, which is probably connected with magnetic rotation, is assigned to the configurations $$\pi${}{g}_{9/2}^{2}{({p}_{3/2}/{f}_{5/2})}^{$-${}1}$\bigotimes${}$\nu${}{g}_{9/2}^{$-${}1}$ before and to $$\pi${}{g}_{9/2}^{2}{({p}_{3/2}/{f}_{5/2})}^{$-${}1}$\bigotimes${}$\nu${}{g}_{9/2}^{$-${}3}$ after the alignment. Self-consistent titled axis cranking calculations based on relativistic mean-field theory are performed to interpret the rotational structure. Characteristic features of magnetic rotation are found for the negative-parity band.

The candidate chiral doublet bands in ${}^{128}$La have been searched for through the ${}^{118}$Sn(${}^{14}$N, 4n)${}^{128}$La reaction at a beam energy of 69 MeV. A positive-parity sideband with the same configuration as that of the yrast band has been identified. The positive-parity and spins of the sideband have been assigned based on the $\Delta I=1$ mixed $M1/E2$ and $E2$ characters of the linking transitions between the sideband and the yrast band. The properties of the sideband and the yrast band are discussed. The newly identified sideband and the yrast band are suggested to form the candidate of the near degenerate chiral doublet bands.