In academic research, OLEDs have exhibited rapid evolution thanks to the development of innovative materials, new device architectures, and optimized fabrication methods, achieving high performance in recent years. The numerous advantages that increasingly distinguish them from traditional light sources, such as a large and customizable emission area, color tunability, flexibility, and transparency, have positioned them as a promising candidate for various applications in the lighting market, including the residential, automotive, industrial, and agricultural sectors. However, despite these promising attributes, the widespread industrial production of OLEDs encounters significant challenges. Key considerations center around efficiency and lifetime. In the present review, after introducing the theoretical basis of OLEDs and summarizing the main performance developments in the industrial field, three crucial aspects enabling OLEDs to establish a competitive advantage in terms of performance and versatility are critically discussed: the quality and stability of the emitted light, with a specific focus on white light and its tunability; the transparency of both electrodes for the development of fully transparent and integrable devices; and the uniformity of emission over a large area.

Indium tin oxide (ITO) is a transparent conductive oxide (TCO) commonly used in the realization of optoelectronic devices needing at least a transparent electrode. In this work, ITO thin films were deposited on glass substrates by non-reactive RF magnetron sputtering, investigating the effects of power density, sputtering pressure, and substrate temperature on the electrical, optical, and structural properties of the as-grown films. High-quality films, in terms of crystallinity, transparency, and conductivity were obtained. The 120 nm thick ITO films grown at 225 °C under an argon pressure of 6.9 mbar and a sputtering power density of 2.19 W/cm² without post-annealing treatments in an oxidizing environment showed an optical transmittance near 90% at 550 nm and a resistivity of $2.10\times {10}^{-4}$ $\mathsf{\Omega }$ cm. This material was applied as the electrode of simple-structure organic light-emitting diodes (OLEDs).