The in-situ observation of Sn-3.0Ag-0.5Cu solder joints under electromigration was conducted to investigate the microstructure and grain orientation evolution. It was observed that there was a grain rotation phenomenon during current stressing by in-situ electron backscattered diffraction (EBSD). The rotation angle was calculated, which indicated that the grain reorientation led to the decrease of the resistance of solder joints. On the other hand, the orientation of β-Sn played a critical role in determining the migration of Cu atoms in solder joints under current stressing migration. When the angle between the electron flow direction and the c-axis of Sn (defined as α) was close to 0°, massive Cu₆Sn₅ intermetallic compounds were observed in the solder bulk; however, when α was close to 90°, the migration of the intermetallic compound (IMC) was blocked but many Sn hillocks grew in the anode. Moreover, the low angle boundaries were the fast diffusion channel of Cu atoms while the high grain boundaries in the range of 55°–65° were not favorable to the fast diffusion of Cu atoms.

In this paper, we characterized and compared signal transmission performances of traces with different specifications of fiber weave. Measurements demonstrated that the dielectric constant, impedance fluctuation, and differential skew were all affected by fiber weave style. For flattened fiber weaves, the dielectric constant fluctuation reached 0.18, the impedance fluctuation amplitude was 1.0 Ω, and the differential skew was 2 ps/in. For conventional fiber weaves, the three parameters were 0.44, 2.5 Ω, and 4 ps/inch respectively. Flattened fiber weave was more favorable for high-speed signal control. We also discussed the other methods to improve the fiber weave effect. It turned out that NE-glass (new electronic glass) fiber weave also had better performance in reducing impedance fluctuation and differential skew. Furthermore, made the signal traces and fiber weave bundles with an angle or designing the long signal line parallel to the weft direction both are simple and effective methods to solve this problem.

We systemically investigated the effect of chip structures on the optical characteristics of micro-size LEDs. The total internal reflection (TIR) can be improved by selecting a suitable chip structure, thereby increasing the light efficiency. The saturation light output power (LOP) of the micro-size LED using pentagon-type structure is 44.78 mW, an increase of 6.08% compared with that of micro-size LED using circular-type structure. Simulation and experimental results indicate that chip structure of pentagon-type can effectively enhance the light extraction from the top or side of the micro-size LED.