The grain orientation of Sn-based solder joints on copper pillars under the combined action of electron wind force and temperature gradient greatly affects their electromigration damage. The copper pillars with Sn-1.8Ag lead-free solder on the top was subjected to a current density of 1.5 × 104 A/cm2 at 125 °C to study the electromigration behaviors. The grain orientation was characterized by scanning electron microscopy (SEM) equipped with electron backscattered diffraction (EBSD) detector. Metal dissolution and voids formation in the cathode as well as massive intermetallic compounds(IMC) accumulation in the anode were observed after electromigration. Closer examination of solder joints revealed that the Sn grain whose c-axis perpendicular to electric current may have retarded Cu diffusion to anode and IMC accumulation. In addition, the newly formed Cu6Sn5 exhibited preferred orientation related to the electric current direction.
The in-situ observation of Sn-3.0Ag-0.5Cu solder joints under electromigration was conducted to investigate the microstructure and grain orientation evolution. It was observed that there was a grain rotation phenomenon during current stressing by in-situ electron backscattered diffraction (EBSD). The rotation angle was calculated, which indicated that the grain reorientation led to the decrease of the resistance of solder joints. On the other hand, the orientation of β-Sn played a critical role in determining the migration of Cu atoms in solder joints under current stressing migration. When the angle between the electron flow direction and the c-axis of Sn (defined as α) was close to 0°, massive Cu6Sn5 intermetallic compounds were observed in the solder bulk; however, when α was close to 90°, the migration of the intermetallic compound (IMC) was blocked but many Sn hillocks grew in the anode. Moreover, the low angle boundaries were the fast diffusion channel of Cu atoms while the high grain boundaries in the range of 55°–65° were not favorable to the fast diffusion of Cu atoms.
23 December 2019 in Journal of Materials Science: Materials in Electronics
In this paper, high strength Cu−Cu interconnections were achieved by sintering the paste of Ag-Sn bimetallic nanoparticles at low temperature. Compared with nano-Ag paste, the outer Sn coatings of the nano-Ag particles were found to be favorable for the densification of the bondline. The microstructures of Ag-Sn bimetallic nanoparticles and the bondlines under different sintereing conditions were studied in detail by x-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The Ag-Sn bimetallic nanoparticles bondline exhibit a high shear strength of 35.3 MPa and a low resistivity of 9.5 μ Ω cm, when sintered at 260 °C for 20 min under a pressure of 0.5 MPa. The electrochemical migration time of this sintered Ag-Sn bimetallic nanoparticles was prolonged to be ten times of that of sintered nano-Ag. This bonding technology based on Ag-Sn bimetallic nanoparticles was a promising die attach method for high temperature power device packaging.