Multiferroic materials have great potential in non-volatile devices for low-power and ultra-high density information storage, owing to their unique characteristic of coexisting ferroelectric and ferromagnetic orders. The effective manipulation of their intrinsic anisotropy makes it promising to control multiple degrees of the storage “medium”. Here, we have discovered intriguing in-plane electrical and magnetic anisotropies in van der Waals (vdW) multiferroic CuCrP₂S₆. The uniaxial anisotropies of current rectifications, magnetic properties and magnon modes are demonstrated and manipulated by electric direction/polarity, temperature variation and magnetic field. More important, we have discovered the spin-flop transition corresponding to specific resonance modes, and determined the anisotropy parameters by consistent model fittings and theoretical calculations. Our work provides in-depth investigation and quantitative analysis of electrical and magnetic anisotropies with the same easy axis in vdW multiferroics, which will stimulate potential device applications of artificial bionic synapses, multi-terminal spintronic chips and magnetoelectric devices.

Semiconductor optoelectronics devices, capable of converting electrical power into light or conversely light into electrical power in a compact and highly efficient manner represent one of the most advanced technologies ever developed, which has profoundly reshaped the modern life with a wide range of applications. In recent decades, semiconductor technology has rapidly evolved from first-generation narrow bandgap materials (Si, Ge) to the latest fourth-generation ultra-wide bandgap semiconductor (GaO, diamond, AlN) with enhanced performance to meet growing demands. Additionally, merging semiconductor devices with other techniques, such as computer assisted design, state-of-the-art micro/nano fabrications, novel epitaxial growth, have significantly accelerated the development of semiconductor optoelectronics devices. Among them, integrating metasurfaces with semiconductor optoelectronic devices have opened new frontiers for on-chip control of their electromagnetic response, providing access to previously inaccessible degrees of freedom. We review the recent advances in on-chip control of a variety of semiconductor optoelectronic devices using integrated metasurfaces, including semiconductor lasers, semiconductor light emitting devices, semiconductor photodetectors, and low dimensional semiconductors. The integration of metasurfaces with semiconductors offers wafer-level ultracompact solutions for manipulating the functionalities of semiconductor devices, while also providing a practical platform for implementing cutting-edge metasurface technology in real-world applications.

Polarization response of artificially structured nano-antennas can be exploited to design innovative optical components, also dubbed “vectorial metasurfaces”, for the modulation of phase, amplitude, and polarization with subwavelength spatial resolution. Recent efforts in conceiving Jones matrix formalism led to the advancement of vectorial metasurfaces to independently manipulate any arbitrary phase function of orthogonal polarization states. Here, we are taking advantages of this formalism to design and experimentally validate the performance of CMOS compatible Jones matrix metasurfaces monolithically integrated with standard VCSELs for on-chip spin-decoupling and phase shaping. Our approach enables accessing the optical spin states of VCSELs in an ultra-compact way with previously unattainable phase controllability. By exploiting spin states as a new degree of freedom for laser wavefront engineering, our platform is capable of operating and reading-out the spin-momentum of lasers associated with injected spin carriers, which would potentially play a pivotal role for the development of emerging spin-optoelectronic devices.

Graphene is an ideal material for wide spectrum detector owing to its special band structure, but its low light absorption and fast composite of photogenerated carriers lead to a weak response performance. In this paper, we designed a unique photoconductive graphene-InGaAs photodetector. The built-in electric field was formed between graphene and InGaAs, which can prolong the lifetime of photogenerated carriers and improve the response of devices by confining the holes. Compared with graphene-Si structure, a higher built-in electric field and reach to 0.54 eV is formed. It enables the device to achieve a responsivity of 60 AW⁻¹ and a photoconductive gain of 79.4 at 792 nm. In the 1550 nm communication band, the responsivity of the device is also greater than 10 AW⁻¹ and response speed is less than 2 ms. Meanwhile, the saturation phenomenon of light response was also found in this photoconductive graphene heterojunction detector during the experiment, we have explained the phenomenon by the capacitance theory of the built-in electric field, and the maximum optical responsivity of the detector is calculated theoretically, which is in good agreement with the measurement result.