Hiroshi Inokawa (Member, IEEE) received his PhD in electrical engineering from Kyoto University, Kyoto, Japan, in 1985. In 1985, he joined Atsugi Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporation (NTT), Kanagawa, Japan. Since then, he has been engaged in the research and development of scaled-down CMOS devices and silicon single-electron devices. He was a Researcher with the National Institute of Science and Technology Policy (NISTEP) from 2002 to 2018. In 2006, he became a Professor with the Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan, where he has been studying nanodevices for advanced circuits and systems. He is a member of the Japan Society of Applied Physics (JSAP), the Institute of Electronics, Information and Communication Engineers of Japan (IEICE), and the Institute of Electrical Engineers of Japan (IEEJ). He has served as a JSAP Board Member (Representative) from 2001 to 2003, as an Editor for JJAP from 2007 to 2013, and as the Chair for the IEEJ Survey Committee of Silicon Nanosystem Integration Technology from 2009 to 2011.