Well aligned crystalline zinc oxide (ZnO) nanowires (NWs) on ZnO/Au/Ti/Si substrates were grown by so-called “hydrothermal synthesis”. ZnO seed layers with different thicknesses ranging from 5 to 100 nm, achieved by controlling the deposition time, were prepared by radio-frequency sputtering, followed by a post-annealing treatment in air at 400 °C. The effects of deposition time and annealing treatment of ZnO seed layers on the subsequent growth of ZnO NWs were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscopy (SEM). The experimental results reveal that the quality and growth behaviors of ZnO NWs are strongly dependent on both the thickness and the heat treatment of the ZnO seed layers. This work is an optimization step of an easy, cost-effective, and industrially scalable process flow recently developed for the fabrication of a high performance, nanocomposite-based stretchable nanogenerator (SNG) on polydimethylsiloxane (PDMS) substrate. The morphological improvement of hydrothermally grown ZnO NWs may therefore lead to higher performance SNGs for the targeted application of mechanical energy harvesting, in order to supply flexible and wearable electronics.

Flexible piezoelectric nanogenerators (PENGs) are very attractive for mechanical energy harvesting due to their high potential for realizing self-powered sensors and low-power electronics. In this paper, a PENG that is based on zinc oxide (ZnO) nanowires (NWs) is fabricated on flexible and transparent Polydimethylsiloxane (PDMS) substrate. The ZnO NWs were deposited on two different seed layer structures, i.e., gold (Au)/ZnO and tin-doped indium-oxide (ITO)/ZnO, using hydrothermal synthesis. Along with the structural and morphological analyses of ZnO NWs, the electrical characterization was also investigated for ZnO NWs-based flexible PENGs. In order to evaluate the suitability of the PENG device structure, the electrical output performance was studied. By applying a periodic mechanical force of 3 N, the ZnO NWs-based flexible PENG generated a maximum root mean square (RMS) voltage and average power of 2.7 V and 64 nW, respectively. Moreover, the comparison between the fabricated device performances shows that a higher electrical output can be obtained when ITO/ZnO seed layer structure is adopted. The proposed ZnO NWs-based PENG structure can provide a flexible and cost-effective device for supplying portable electronics.

In this study, different seed layers like gold (Au), zinc oxide (ZnO) and aluminum-doped ZnO (AZO) have been associated to ZnO nanowires (NWs) for the development of mechanical energy harvesters. ZnO NWs were grown by using a low temperature hydrothermal method. The morphological properties were investigated using Scanning Electron Microscopy (SEM) and the analysis of crystalline quality and growth orientation was studied using X-ray Diffraction (XRD). The obtained ZnO NWs are found to be highly dense, uniformly distributed and vertically well aligned on the ZnO and AZO seed layers, while ZnO NWs grown on Au possess a low density and follow a non-uniform distribution. Moreover, the NWs exhibited good crystal quality over the seed layers. The piezoelectric nanogenerator (PENG) consists of ZnO NWs grown on the three different seed layers, parylene-C matrix, Ti/Al top electrode and poly(dimethylsiloxane) (PDMS) encapsulated polymer composite. The measurements of the open circuit voltage (V_OC) were around 272 mV, 36 mV for ZnO, AZO seed layers while the PENG including Au seed layer presented a short-circuited state. This study is an important step in order to investigate the effect of different seed layers influencing the magnitude of the generated electrical performances under identical growth and measurement conditions. It will also help identify the most suitable seed layers for energy harvesting devices and their future integration in industrial applications.

ZnO nanowires (NWs) are very attractive for a wide range of nanotechnological applications owing to their tunable electron concentration via structural and surface defect engineering. A 2D electrical profiling of these defects is necessary to understand their restructuring dynamics during engineering processes. Our work proposes the exploration of individual ZnO NWs, dispersed on a SiO₂/p⁺⁺-Si substrate without any embedding matrix, along their axial direction using scanning capacitance microscopy (SCM), which is a useful tool for 2D carrier profiling. ZnO NWs are hydrothermally grown using 0–20 mM ammonium hydroxide (NH₄OH), one of the reactants of the hydrothermal synthesis, and then annealed in a tube oven at 350 °C/1.5–15 h and 450 °C/15 h. While the as-grown ZnO NWs are highly conductive, the annealed ones exhibit significant SCM data with a high signal-to-noise ratio and temperature-dependent uniformity. The SCM signal of ZnO NWs is influenced by both their reduced dimensionality and the electron screening degree inside them. The electrical activity of ZnO NWs is only observed below a critical defect concentration that depends on the annealing temperature. Optimal SCM signals of 200 and 147 mV are obtained for samples with 0 and 20 mM NH₄OH, respectively, and annealed at 350 °C/15 h. The corresponding electron concentrations of 3.27 × 10¹⁸ and 4.58 × 10¹⁸ cm⁻³ were estimated from the calibration curve, respectively. While thermal treatment in air of ZnO NWs is an effective approach to tune the defect density, 2D electrical mapping enables identifying their optimal electrical characteristics, which could help to boost the performance of final devices exploiting their coupled semiconducting–piezoelectric properties.