Controlling properties of one-dimensional (1D) semiconducting nanostructures is essential for the advancement of electronic devices. In this work, we present a low-temperature hydrothermal growth process enabling density control of aligned high aspect ratio ZnO nanowires (NWs) on seedless Au surface. A two order of magnitude change in ZnO NW density is demonstrated via careful control of the ammonium hydroxide concentration (NH₄OH) in the solution. Based on the experimental observations, we further, hypothesized the growth mechanism leading to the density controlled growth of ZnO NWs. Moreover, the effect of NH₄OH on the electrical properties of ZnO NWs, such as doping and field-effect mobility, is thoroughly investigated by fabricating single nanowire field-effect transistors. The electrical study shows the increase of free charge density while decrease of mobility in ZnO NWs with the increase of NH₄OH concentration in the growth solution. These findings show that NH₄OH can be used for simultaneous tuning of the NW density and electrical properties of the ZnO NWs grown by hydrothermal approach. The present work will guide the engineers and researchers to produce low-temperature density controlled aligned 1D ZnO NWs over wide range of substrates, including plastics, with tunable electrical properties.

Well aligned crystalline zinc oxide (ZnO) nanowires (NWs) on ZnO/Au/Ti/Si substrates were grown by so-called “hydrothermal synthesis”. ZnO seed layers with different thicknesses ranging from 5 to 100 nm, achieved by controlling the deposition time, were prepared by radio-frequency sputtering, followed by a post-annealing treatment in air at 400 °C. The effects of deposition time and annealing treatment of ZnO seed layers on the subsequent growth of ZnO NWs were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscopy (SEM). The experimental results reveal that the quality and growth behaviors of ZnO NWs are strongly dependent on both the thickness and the heat treatment of the ZnO seed layers. This work is an optimization step of an easy, cost-effective, and industrially scalable process flow recently developed for the fabrication of a high performance, nanocomposite-based stretchable nanogenerator (SNG) on polydimethylsiloxane (PDMS) substrate. The morphological improvement of hydrothermally grown ZnO NWs may therefore lead to higher performance SNGs for the targeted application of mechanical energy harvesting, in order to supply flexible and wearable electronics.

Flexible piezoelectric nanogenerators (PENGs) are very attractive for mechanical energy harvesting due to their high potential for realizing self-powered sensors and low-power electronics. In this paper, a PENG that is based on zinc oxide (ZnO) nanowires (NWs) is fabricated on flexible and transparent Polydimethylsiloxane (PDMS) substrate. The ZnO NWs were deposited on two different seed layer structures, i.e., gold (Au)/ZnO and tin-doped indium-oxide (ITO)/ZnO, using hydrothermal synthesis. Along with the structural and morphological analyses of ZnO NWs, the electrical characterization was also investigated for ZnO NWs-based flexible PENGs. In order to evaluate the suitability of the PENG device structure, the electrical output performance was studied. By applying a periodic mechanical force of 3 N, the ZnO NWs-based flexible PENG generated a maximum root mean square (RMS) voltage and average power of 2.7 V and 64 nW, respectively. Moreover, the comparison between the fabricated device performances shows that a higher electrical output can be obtained when ITO/ZnO seed layer structure is adopted. The proposed ZnO NWs-based PENG structure can provide a flexible and cost-effective device for supplying portable electronics.

The accurate and precise measurements of voltage and current output generated by a nanogenerator (NG) are crucial to design the rectifying/harvesting circuit and to evaluate correctly the amount of energy provided by a NG. High internal impedance of the NGs (several MΩ) is the main limiting factor for designing circuits to measure the open circuit voltage. In this paper, we present the influence of the characterization circuit used to measure the generated voltage of piezoelectric NGs. The proposed circuit consists of a differential amplifier which permits us to measure the voltage provided by the NG without applying any parasitic bias to it. The proposed circuit is compared to a commercial electrometer and a homemade buffer circuit based on a voltage follower circuit to show its interest. For the proposed double buffer circuit, no asymmetric behavior has been noticed contrary to the measurements made using a simple buffer circuit and a Keithley electrometer. The proposed double buffer circuit is thus suitable to measure the NG voltage in a transparent way, as an ideal voltage probe should do.

In the present paper, the influence of manganese doping on the dielectric properties of BaSrTiO3 thin films is presented. The real and imaginary parts of the material's permittivity have been measured in a large frequency range (100 Hz–1 MHz) and as a function of the electric field. The tunability and the figure of merit of the material have been obtained from the measurement of the permittivity under an applied DC bias electric field. For the undoped material, the dielectric losses become important for a large DC bias which leads to breakdown. At a suitable dopant rate, this effect disappears. In order to better understand the origin of the related phenomena, we measure the permittivity as a function of the AC excitation amplitude and we decompose the obtained permittivity with the hyperbolic law. This enables to extract the different contributions of the bulk (low frequency diffusion and high frequency lattice relaxation) and of the domain wall motions (vibration and pinning/unpinning) to the material's dielectric permittivity and to understand the effect of manganese doping on each contribution. Knowledge of the related mechanisms allows us to establish the optimum dopant rate (mainly conditioned by the lattice contribution) and to reduce the domain wall motion, which finally is beneficial for the desired properties of the ferroelectric thin film. A particular attention is paid to low frequency diffusion, an especially harmful effect when a DC biasing is mandatory (tunable electronic component in mobile telecommunication devices for example).