This paper presents an eight-channel time-interleaved (TI) 2.6 GS/s 8-bit successive approximation register (SAR) analog-to-digital converter (ADC) prototype in a 55-nm complementary metal-oxide-semiconductor (CMOS) process. The channel-selection-embedded bootstrap switch is adopted to perform sampling times synchronization using the full-speed master clock to suppress the time skew between channels. Based on the segmented pre-quantization and bypass switching scheme, double alternate comparators clocked asynchronously with background offset calibration are utilized in sub-channel SAR ADC to achieve high speed and low power. Measurement results show that the signal-to-noise-and-distortion ratio (SNDR) of the ADC is above 38.2 dB up to 500 MHz input frequency and above 31.8 dB across the entire first Nyquist zone. The differential non-linearity (DNL) and integral non-linearity (INL) are +0.93/−0.85 LSB and +0.71/−0.91 LSB, respectively. The ADC consumes 60 mW from a 1.2 V supply, occupies an area of 400 μm × 550 μm, and exhibits a figure-of-merit (FoM) of 348 fJ/conversion-step.

This paper presents an 8GSps 14bit current steering RF digital-to-analog converter (DAC) for communication system. Double edge sampling method is adapted to reduce maximum clock frequency. To suppress the 3rd order intermodulation (IM3), current switch driver with enhanced reset circuit is proposed. An improved dynamic element matching (DEM) method based on optimized switching sequence is adopted. According to experimental result, the measured IM3 is below –62dBc up to 3.6GHz. The digital interpolation and up-converters block are included. 8 lane 10Gbps JESD 204B receiver are integrated. The chip is fabricated in 40nm CMOS, with a die size of 2.75 × 3 mm2.

A 3GS/s 12-bit current-steering digital-to-analog converter (DAC) fabricated in 55 nm complementary metal–oxide–semiconductor (CMOS) technology has been presented. A partial randomization dynamic element matching (PRDEM) method based on switching sequence optimization is proposed to mitigate the mismatch effect and suppress the harmonic distortion with low hardware complexity. In the switching current cell, the cascode structure together with “always-ON” small current sources are used to keep the output impedance high and uniform. A compact layout of the switching current array is carefully designed, featuring short wires routing and small parasitic capacitance. According to the measured results at 3GS/s, this DAC demonstrates a spurious-free dynamic range (SFDR) of 74.64 dBc at low frequency and 50 dBc at 1.5 GHz output. The chip occupies an active area of 0.2 × 0.48 mm² and consumes a total power of 495 mW.

A 5 GS/s 8-bit analog-to-digital converter (ADC) implemented in 0.18 μm SiGe BiCMOS technology has been demonstrated. The proposed ADC is based on two-channel time-interleaved architecture, and each sub-ADC employs a two-stage cascaded folding and interpolating topology of radix-4. An open loop track-and-hold amplifier with enhanced linearity is designed to meet the dynamic performance requirement. The on-chip self-calibration technique is introduced to compensate the interleaving mismatches between two sub-ADCs. Measurement results show that the spurious free dynamic range (SFDR) stays above 44.8 dB with a peak of 53.52 dB, and the effective number of bits (ENOB) is greater than 5.8 bit with a maximum of 6.97 bit up to 2.5 GS/s. The ADC exhibits a differential nonlinearity (DNL) of -0.31/+0.23 LSB (least significant bit) and an integral nonlinearity (INL) of -0.68/+0.68 LSB, respectively. The chip occupies an area of 3.9 × 3.6 mm², consumes a total power of 2.8 W, and achieves a figure of merit (FoM) of 10 pJ/conversion step.