Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.

High quality Al₂O₃ film grown by atomic layer deposition (ALD), with ozone (O₃) as oxygen source, is demonstrated for fabrication of normally-off AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). Significant suppression of Al–O–H and Al–Al bonds in ALD-Al₂O₃ has been realized by substituting conventional H₂O source with O₃. A high dielectric breakdown E-field of 8.5 MV/cm and good TDDB behavior are achieved in a gate dielectric stack consisting of 13-nm O₃-Al₂O₃ and 2-nm H₂O-Al₂O₃ interfacial layer on recessed GaN. By using this 15-nm gate dielectric and a high-temperature gate-recess technique, the density of positive bulk/interface charges in normally-off AlGaN/GaN MIS-HEMTs is remarkably suppressed to as low as 0.9 × 10¹²cm⁻², contributing to the realization of normally-off operation with a high threshold voltage of +1.6 V and a low specific ON-resistance R_ON,sp of 0.49 mΩ cm².

This article presents a 50-112-Gb/s current-mode four-level pulse amplitude modulation (PAM-4) transmitter with a two-tap fractional-spaced feed-forward equalizer (FFE). The principle analysis shows that the fractional-spaced FFE can provide an extended compensation range beyond the Nyquist frequency without amplifying noise. For the transmitter prototype implementation, the tap delay is adjusted by a coarse-fine capacitor array-based delay cell located in the quarter-rate clock path. Dynamic latches, pseudo-AND2s, and bandwidth-enhanced 4:1 multiplexers are employed to guarantee an adequate timing margin and a sufficient bandwidth for the data rate of 112 Gb/s. A linearity-optimized FFE driver is employed to overcome the current compression caused by the channel-length modulation. Fabricated in a 65-nm CMOS process, the measurement results show that the proposed fractional-spaced FFE can significantly improve the eye-opening in terms of expanding the eye width and optimizing the eyelid thickness. The PAM-4 transmitter can operate in both full-rate PAM-4 and half-rate NRZ modes, achieving a maximum data rate of 112 Gb/s with an energy efficiency of 2.17 pJ/bit.

A Ka-band AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) with SiN gate dielectric grown by plasma-enhanced atomic layer deposition (PEALD) is demonstrated. The gate reverse leakage current in a controlled HEMT is reduced by about three orders of magnitude by the PEALD-SiN, contributing to an improved breakdown voltage of 92.5 V (source-drain separation of 2.0 μm) in the fabricated MIS-HEMTs. The MIS-HEMTs also feature small threshold voltage hysteresis in dc transfer and capacitance-voltage characterizations, suggesting a good PEALD-SiN/AlGaN interface. The fabricated MIS-HEMTs deliver a high output power density of 7.16 W/mm and a peak power-added efficiency of 60.3%, respectively, at VDS = 30 V and VDS = 10 V in pulse mode at 28 GHz. PEALD-SiN could be a compelling gate dielectric for fabrication of high-power and high-efficiency MIS-HEMTs.

The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio frequency (RF) power, ratio of mixed gas, flow rate, and chamber pressure, etc. In particular, the microtrench at the bottom corner of the mesa sidewall was eliminated by a combination of ICP dry etching and tetramethylammonium hydroxide (TMAH) wet treatment. Finally, a highly anisotropic profile of the mesa sidewall was realized by using the optimized etch recipe, and a quasi-vertical GaN SBD was demonstrated, achieving a low reverse current density of 10⁻⁸ A/cm² at −10 V.