Prof. Ching-Ting Lee
Department of Photonics, National Cheng Kung University, Tainan 701, Taiwan
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Academic Career Length
25Years (2002-Present)
(Calculated once Scilit publication data is synced: current year − year of first publication + 1)
Representative Publications
View All Publications1 June 2019 in Journal of Alloys and Compounds
Journal Article
Ching-Ting LeeYWYu-Shiang Wang
Yu-Shiang Wang
25 December 2017 in IEEE Photonics Technology Letters
Journal Article
GCGuan-Syun Chen
Guan-Syun Chen
BWBo-Yu Wei
Bo-Yu WeiChing-Ting Lee
Hsin-Ying LeeIn this letter, monolithic red, green, and blue (RGB) micro light-emitting diodes (LEDs) were fabricated using gallium nitride based blue micro LEDs and quantum dots (QDs). Red and green QDs were sprayed onto individual region surrounded by patterned black matrix photoresist on the blue micro LEDs to form color conversion layers. Owing to its light-blocking capability, the patterned black matrix photoresist improved the contrast ratio of the micro LEDs from 11 to 22. To enhance the color conversion efficiency and the light output intensity, a hybrid Bragg reflector (HBR) was deposited on the bottom side of the monolithic RGB micro LEDs, thus reflecting the RGB light emitted to the substrate. To further improve the color purity of the red and green light, a distributed Bragg reflector (DBR) with high reflection for the blue light was deposited on the top side of the QDs/micro LEDs. The red and green light output intensities of the micro LEDs with HBR and DBR were enhanced by about 27%.
Journal Article
Ching-Ting LeeZinc oxide (ZnO) is a potential candidate material for optoelectronic applications, especially for blue to ultraviolet light emitting devices, due to its fundamental advantages, such as direct wide band gap of 3.37 eV, large exciton binding energy of 60 meV, and high optical gain of 320 cm−1 at room temperature. Its luminescent properties have been intensively investigated for samples, in the form of bulk, thin film, or nanostructure, prepared by various methods and doped with different impurities. In this paper, we first review briefly the recent progress in this field. Then a comprehensive summary of the research carried out in our laboratory on ZnO preparation and its luminescent properties, will be presented, in which the involved samples include ZnO films and nanorods prepared with different methods and doped with n-type or p-type impurities. The results of ZnO based LEDs will also be discussed.
1 January 2019 in Journal of Alloys and Compounds
Journal Article
Journal Article
Ching-Ting LeeYCYing-Shuo Chiu
Ying-Shuo ChiuSHShu-Ching Ho
Shu-Ching HoYLYao-Jung Lee
Yao-Jung LeeA vapor cooling condensation system was used to deposit high quality intrinsic ZnO thin films and intrinsic ZnO nanorods as the sensing membrane of extended-gate field-effect-transistor (EGFET) glucose biosensors. The sensing sensitivity of the resulting glucose biosensors operated in the linear range was 13.4 μA mM−1 cm−2. To improve the sensing sensitivity of the ZnO-based glucose biosensors, the photoelectrochemical method was utilized to passivate the sidewall surfaces of the ZnO nanorods. The sensing sensitivity of the ZnO-based glucose biosensors with passivated ZnO nanorods was significantly improved to 20.33 μA mM−1 cm−2 under the same measurement conditions. The experimental results verified that the sensing sensitivity improvement was the result of the mitigation of the Fermi level pinning effect caused by the dangling bonds and the surface states induced on the sidewall surface of the ZnO nanorods.
8 February 2018 in IEEE Photonics Technology Letters
Journal Article
To modulate the cutoff wavelength of the metal-semiconductor-metal deep ultraviolet photodetectors (MSM DUV-PDs), the aluminum content of the aluminum oxide-alloyed gallium oxide (Ga2O3:Al2O3) absorption layers were deposited using radio frequency (RF) magnetron cosputter system with dual targets, in which the Ga2O3 target was sputtered with a RF power of 100 W and the Al2O3 target sputtered with various RF powers. The optical bandgap energy of the Ga2O3:Al2O3 films increased with an increase of the Al content deposited with a larger sputtered RF power of the Al2O3 target. In view of the suppression effect of the oxygen vacancy and the defect by the more Al-O bonds in the Ga2O3:Al2O3 absorption layer, the noise performances and the detectivity of the MSM DUV-PDs were improved. For depositing the Al atomic percentage of 5.9 % in the Ga2O3:Al2O3 absorption layer, the resulting MSM DUV-PDs revealed the cutoff wavelength of 230 nm, the noise equivalent power of 2.80 × 10−12 W, and the detectivity of 1.37 × 1011 cmHz0.5W−1. Furthermore, the dominant low frequency noise source was the flicker noise.
About Me
Ching-Ting Lee received his B.S. and M.S. degrees from the Electrical Engineering Department of the National Cheng Kung University, Taiwan, Republic of China, in 1972 and 1974, respectively. He received his Ph.D. degree from the Electrical Engineering Department of the Carnegie-Mellon University, Pittsburgh, PA, in 1982. He worked at the Chung Shan Institute of Science and Technology before he joined the Institute of Optical Sciences, National Central University, Chung-Li, Taiwan, as a Professor in 1990. He worked at the National Cheng Kung University as the Dean of the College of Electrical Engineering and Computer Science from 2003 to 2009. He transferred to Yuan Ze University as the Vice President in 2018. His current research interests include nanomaterials and devices, biomedical sensors, the light emission of Si nanoclusters, nanostructured solar cells, GaN-based light-emitting diodes and lasers, and GaN-based metal-oxide-semiconductor field effect transistors. His research activities have also involved research concerning III-V semiconductor lasers, photodetectors, high-speed electronic devices, and their associated integration for electro-optical integrated circuits.